Si衬底GaN基功率电子材料及器件的研制
发布时间：2019-04-24 11:53
【摘要】：目前,采用Si上生长氮化镓(GaN)材料这一技术路线制备功率电子器件,已成为业界共识。而这一技术路线最大的挑战就是Si衬底GaN外延生长应力调控、高耐压和导通电阻稳定性控制技术。成功地制备了无裂纹、低翘曲、高导通、均一性好、耐压高的2~8英寸Si衬底GaN外延片,外延材料满足650 V功率器件要求,并在6英寸互补金属氧化物半导体(CMOS)产线上成功开发出650 V,200 mΩ的功率场效应晶体管(FET)器件。
[Abstract]:At present, it has become the consensus of industry to fabricate power electronic devices by using (GaN) material grown on Si. The biggest challenges of this technology route are GaN epitaxial growth stress regulation, high voltage tolerance and on-resistance stability control on Si substrates. Crack-free, low warping, high on, good uniformity and high voltage resistance of GaN epitaxial wafer on 2? 8 "Si substrate have been successfully fabricated. The epitaxial material meets the requirements of 650V power device, and the epitaxial material meets the requirements of 650V power device. A 650V, 200m 惟 power field-effect transistor (FET) device has been successfully developed on the 6-inch complementary metal oxide semiconductor (CMOS) production line.
【作者单位】： 江苏华功半导体有限公司;
【分类号】：TN304;TN386
本文编号：2464423
[Abstract]:At present, it has become the consensus of industry to fabricate power electronic devices by using (GaN) material grown on Si. The biggest challenges of this technology route are GaN epitaxial growth stress regulation, high voltage tolerance and on-resistance stability control on Si substrates. Crack-free, low warping, high on, good uniformity and high voltage resistance of GaN epitaxial wafer on 2? 8 "Si substrate have been successfully fabricated. The epitaxial material meets the requirements of 650V power device, and the epitaxial material meets the requirements of 650V power device. A 650V, 200m 惟 power field-effect transistor (FET) device has been successfully developed on the 6-inch complementary metal oxide semiconductor (CMOS) production line.
【作者单位】： 江苏华功半导体有限公司;
【分类号】：TN304;TN386
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