记忆器件等效电路模型及电学特性研究

发布时间：2019-04-26 04:10

【摘要】：忆阻器、忆容器和忆感器作为三种新型的记忆器件,延伸了经典的电子电路基本理论。由于记忆器件其特有的“记忆”特性,其潜在价值引起了广泛关注,已在非易失性存储器、人工神经网络、生物医学、图像处理和混沌电路中得到应用。但记忆器件的制备受限于精密的纳米技术和苛刻的实验环境,其商品化还需漫长的过程。为了便于分析和研究记忆器件的电学特性及其相关应用,根据记忆器件的实际电学特性来构建其等效电路模型是一种行之有效的方法。本文所研究的内容主要分为记忆器件等效电路模型的构建和记忆器件电学特性的研究,主要包含以下几个部分:(1)本文以惠普忆阻器为基础,详细地介绍了其物理结构与记忆机理。综述了记忆器件的国内外研究现状以及其应用领域与前景。从电路学理论的完备性出发证明了忆阻器的存在,由于记忆效应是纳米材料普遍存在的一种现象,从而忆容器和忆感器的相关概念相继提出。(2)根据忆阻器的赋定关系,采用通用的电子元件搭建了一个最简忆阻器模拟器,该电路仅包含5个元器件,但遗憾的是只能实现接地形式。作为一个二端口器件,忆阻器应该可以与其他电子元器件实现任意的连接,为解决这个缺陷,对该电路进行改进设计了一种浮地型忆阻器模拟器,并对其电路进行硬件实现,实验测试结果很好的显示了忆阻器其典型的收缩迟滞环。(3)为了在同一个电路中模拟三种记忆器件的电学行为,结合线性电压控制浮地阻抗电路和电流积分器,构建了一种结构简单的通用的记忆器件模拟器。在相同的拓扑结构下,该模拟器电路通过接入不同类型的元器件,能分别模拟忆阻器、忆容器和忆感器的电学行为。该模拟器浮地且采用通用的电子元件搭建,因而方便在简单的实验环境下分析和研究记忆器件的特性及其应用电路。(4)对于浮地型忆阻器模拟器,本文研究分析了激励信号的类型、频率和幅值的变化对其电学特性的影响。而记忆器件作为一个受内部状态变量控制的动态器件,其内部状态变量的初始值对器件电学特性的影响尤为重要。本文以分段线性忆感器的数学模型为基础,从对称性和非对称性两种分段线性模型出发,研究了内部状态变量在不同的初始值下对忆感器电学特性的影响。(5)将本文所提出的通用的记忆器件模拟器分别替换RLC串联电路中的电阻、电感和电容元件,得到三种新型的串联谐振电路,从时域和频域两方面出发研究分析了记忆器件对电路的影响,对于记忆器件的潜在应用提供了重要的指导作用。
[Abstract]:As three new memory devices, memory receptacle, memory container and memory sensor extend the classical electronic circuit theory. Due to its unique "memory" characteristics, the potential value of memory devices has attracted extensive attention and has been used in non-volatile memory, artificial neural networks, biomedicine, image processing and chaotic circuits. However, the manufacture of memory devices is limited to precise nanotechnology and harsh experimental environment, and its commercialization still needs a long process. In order to analyze and study the electrical characteristics of memory devices and their related applications, it is an effective method to construct the equivalent circuit model according to the actual electrical characteristics of memory devices. The contents of this thesis are mainly divided into the construction of equivalent circuit model of memory devices and the study of electrical characteristics of memory devices. The main contents are as follows: (1) this paper is based on Hewlett-Packard memory resistor (Hewlett-Packard). Its physical structure and memory mechanism are introduced in detail. The research status, application fields and prospects of memory devices at home and abroad are reviewed. Based on the completeness of circuit theory, the existence of memory resistor is proved. Because memory effect is a common phenomenon in nanomaterials, the related concepts of memory container and memory sensor have been put forward one after another. (2) according to the definite relation of memory resistor, the concept of memory receptacle and memory sensor have been put forward one after another. A minimum memory resistor simulator is built by using general electronic components. The circuit contains only five components, but unfortunately only earthing form can be realized. As a two-port device, the memory device should be able to connect with other electronic components at will. In order to solve this problem, a floating memory resistor simulator is designed and implemented in hardware. The experimental results show the typical contraction hysteresis loop of the resistor. (3) in order to simulate the electrical behavior of three memory devices in the same circuit, the floating impedance circuit and the current integrator are controlled by the linear voltage, and the current integrator is used to simulate the electrical behavior of the three kinds of memory devices in the same circuit. A general memory device simulator with simple structure is constructed. Under the same topology, the circuit of the simulator can simulate the electrical behavior of the resistor, the receptacle and the memory sensor by connecting different types of components. The simulator is floating and built with general electronic components, so it is convenient to analyze and study the characteristics of memory devices and their application circuits in a simple experimental environment. (4) for floating memory resistor simulators, it is convenient to analyze and study the characteristics of memory devices and their application circuits in a simple experimental environment. In this paper, the influence of the type, frequency and amplitude of excitation signal on its electrical properties is studied and analyzed. As a dynamic device controlled by internal state variables, the influence of the initial value of internal state variables on the electrical characteristics of memory devices is particularly important. Based on the mathematical model of piecewise linear memory sensor, this paper starts from two kinds of piecewise linear models: symmetry and asymmetry. The influence of internal state variables on the electrical characteristics of the memory sensor under different initial values is studied. (5) the universal memory device simulator proposed in this paper is replaced with the resistance, inductance and capacitor elements in the RLC series circuit, respectively. Three new series resonant circuits are obtained. The influence of memory devices on the circuit is studied in both time domain and frequency domain, which provides important guidance for the potential application of memory devices.
【学位授予单位】：湘潭大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN60

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