退火工艺对可控硅辐照效应的影响
发布时间：2019-04-26 18:04
【摘要】：应用1.4 Me V电子束对单向可控硅晶圆芯片进行固定注量率辐照,通过触发电流和少子寿命表征辐照效应,研究了退火工艺对辐照效应的影响。结果表明:电子辐照缩短单向可控硅少子寿命,增大触发电流。经350℃退火后触发电流恢复到辐照前水平,少子寿命虽有一定恢复,但远比辐照前短。在试验的注量范围内k系数为常数,退火后k系数与注量相关,小注量时较小。常温存放对辐照效应有较大影响,长时间存放不利于200℃退火而有利于300℃退火。
[Abstract]:One-way thyristor wafer was irradiated with a fixed dose rate by 1.4 Me V electron beam. The effect of annealing process on radiation effect was studied by characterizing the irradiation effect by triggering current and minority ion lifetime. The results show that electron irradiation shortens the minority carrier lifetime of unidirectional thyristor and increases the trigger current. After annealing at 350 鈩，
本文编号：2466272
[Abstract]:One-way thyristor wafer was irradiated with a fixed dose rate by 1.4 Me V electron beam. The effect of annealing process on radiation effect was studied by characterizing the irradiation effect by triggering current and minority ion lifetime. The results show that electron irradiation shortens the minority carrier lifetime of unidirectional thyristor and increases the trigger current. After annealing at 350 鈩，
本文编号：2466272
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