毫米波亚毫米波段InP HBT特性及模型研究

发布时间：2019-05-19 08:08

【摘要】：无线通信产业的发展和移动互联设备的增加对无线通信频段带宽提出了更高的需求,毫米波频段十分可观的资源显得更有吸引力,通信产业的发展同时也促进了毫米波器件的研制。InP基HBT器件作为一类毫米波器件拥有线性度好、高增益、高功率密度、高截止频率、相位噪声低等优点,是光纤通信和无线通信应用领域的重要高频电子器件之一。HBT器件原理与BJT基本一致,先前数类BJT模型仍能够用于HBT器件的参数提取,但是此类模型用于参数提取的准确性低且适用性有限,模型拓扑网络和器件实际物理结构及相关寄生效应无法严格对应,因此开发出针对InP基HBT的准确模型十分必要。本文首先对HBT的发展历程进行概述,比较了不同材料系HBT的优缺点,介绍了HBT器件的工作原理。之后介绍了原本针对BJT进行开发的简单器件模型EM、GP,以及对HBT进行过优化的两类高级模型VBIC和HICUM,重点阐述了专门针对III-V族化合物HBT器件开发的AgilentHBT模型。文章完成了VBIC、HICUM、AgilentHBT三类模型DC 66GHz的模型提取,并在DC、渡越时间、特征频率曲线上比较了三类模型的参数拟合精度,得出相对适用于InP基HBT毫米波亚毫米波段参数提取的模型。在文章最后介绍了利用AgilentHBT模型对InP基HBT器件进行75-110GHz、220-325GHz频段大信号建模的完整流程,并且在直流、电压电容关系、渡越时间、特征频率和S参数上进行了模型准确性的验证。最后在220GHz-325GHz测试数据基础上,对不同因素引发器件稳定性变化过程进行了分析。
[Abstract]:With the development of wireless communication industry and the increase of mobile interconnection equipment, the bandwidth of wireless communication band is higher, and the considerable resources of millimeter wave band are more attractive. The development of communication industry has also promoted the development of millimeter wave devices. InP-based HBT devices, as a class of millimeter wave devices, have many advantages, such as good linearity, high gain, high power density, high cutoff frequency, low phase noise and so on. HBT is one of the most important high frequency electronic devices in the field of optical fiber communication and wireless communication applications. The principle of BJT devices is basically the same as that of HBT. The previous BJT models can still be used to extract the parameters of HBT devices. However, this kind of model has low accuracy and limited applicability in parameter extraction, and the actual physical structure and related parasitic effects of the model topology network and devices can not be strictly corresponding, so it is necessary to develop an accurate model for InP-based HBT. In this paper, the development of HBT is summarized, the advantages and disadvantages of different material systems HBT are compared, and the working principle of HBT devices is introduced. Then the simple device model EM,GP, which was originally developed for BJT, and two kinds of advanced models VBIC and HICUM, which have been optimized for HBT, are introduced, and the AgilentHBT model specially developed for III-V group compound HBT devices is described in detail. In this paper, the model extraction of VBIC,HICUM,AgilentHBT three kinds of models DC / 66GHz is completed, and the parameter fitting accuracy of the three kinds of models is compared on the DC, transit time and characteristic frequency curve. A model suitable for parameter extraction of HBT millimeter wave submillimeter band based on InP is obtained. At the end of the paper, the complete process of large signal modeling of InP based HBT devices in the frequency band of 75 脳 110GHz and 220 卤325GHz by using AgilentHBT model is introduced, and the relationship between DC and voltage capacitance and transit time is also introduced. The accuracy of the model is verified on the characteristic frequency and S parameters. Finally, based on the 220GHz-325GHz test data, the stability change process of the device caused by different factors is analyzed.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8

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