铟镓锌氧化物半导体材料的研究与仿真

发布时间：2019-05-22 18:47

【摘要】：铟镓锌氧化物半导体作为一个历史只有十多年的材料,目前其导电机制还没有定论。但是可以肯定的是,铟镓锌氧化物的态密度是其电学性质的一个重要表征。在现有文献中,对铟镓锌氧化物半导体态密度模型的研究则主要都集中在一些特定的模型或者模型参数的提取上。本文结合了现有铟镓锌氧化物半导体研究中的主流态密度模型,通过使用计算机仿真软件,对相关材料与器件进行了建模与仿真,并分别就每个模型参数对器件特性的影响以及模型参数之间的互相影响进行了详尽的研究。本文还创新性地通过提取器件禁带中陷阱俘获电荷分布曲线的方法直观地展示出了态密度模型参数对器件特性的影响;并在这一基础上进一步优化,通过使用不同的栅偏置电压提取俘获电荷分布曲线,从而将态密度模型参数对器件的影响放大。经过一系列的仿真分析,本文定性地给出了每个态密度模型参数对器件特性的影响,并对其原因进行了详细的分析。仿真结果表明:铟镓锌氧化物半导体态密度模型中的受主部分主要影响器件的漏极电流和阈值电压,当受主态密度增加时,器件的漏极电流减小,阈值电压增大;而施主部分则主要影响器件的亚阈值特性,取决于其在禁带中的位置,当费米能级附近的施主态密度增加时,器件的亚阈值摆幅增大,当费米能级上方的施主态密度增加时,器件的阈值电压减小;此外,当施主态密度分布中心由导带附近向价带移动时,器件的漏极电流和阈值电压均减小。对于不同的制造工艺,铟镓锌氧化物半导体的性质存在差别,因此这些结果都对未来在仿真特定制造工艺的铟镓锌氧化物半导体器件时的材料定义工作提供了指导。同时,本文还探讨了铟镓锌氧化物半导体柔性器件的仿真和其光照特性的仿真。其中前者的仿真结果显示出平面器件和曲面器件在器件特性上没有区别,但是这个结果是在缺乏应力模型的条件下得出的,不能作为铟镓锌氧化物半导体在柔性器件应用领域适用性的证明。在后者的仿真中,我们观察到了光照对铟镓锌氧化物半导体器件的影响,但是,同样在缺乏相关仿真模型的条件下,这个影响与光照对氢化非晶硅的作用类似,即光照仅仅只是增加了器件的关断电流,而缺乏了其对铟镓锌氧化物半导体器件阈值电压的独特作用。
[Abstract]:As an indium gallium zinc oxide semiconductor with a history of only more than ten years, the conductive mechanism of indium gallium zinc oxide semiconductor has not yet been determined. However, it is certain that the density of states of indium gallium zinc oxide is an important characterization of its electrical properties. In the existing literature, the research on the density of states model of indium gallium zinc oxide semiconductor is mainly focused on the extraction of some specific models or model parameters. In this paper, the main current state density model of indium gallium zinc oxide semiconductor is combined, and the related materials and devices are modeled and simulated by using computer simulation software. The influence of each model parameter on the device characteristics and the interaction between the model parameters are studied in detail. In this paper, the influence of state density model parameters on the characteristics of the device is also shown intuitively by extracting the charge distribution curve of trap capture in the band gap of the device. On this basis, the capture charge distribution curve is extracted by using different gate bias voltage, and the influence of state density model parameters on the device is amplified. After a series of simulation analysis, the influence of the parameters of each state density model on the device characteristics is qualitatively given, and the causes are analyzed in detail. The simulation results show that the drain current and threshold voltage of indium gallium zinc oxide semiconductor state density model mainly affect the drain current and threshold voltage of indium gallium zinc oxide semiconductor. when the density of host state increases, the drain current of indium gallium zinc oxide semiconductor decreases and the threshold voltage increases. The donor part mainly affects the subthreshold characteristics of the device, depending on its position in the band gap. When the donor state density near the Fermi energy level increases, the subthreshold swing of the device increases, and when the donor state density above the Fermi energy level increases, The threshold voltage of the device is reduced. In addition, when the donor density distribution center moves from the conduction band to the valence band, the drain current and threshold voltage of the device decrease. For different manufacturing processes, the properties of indium gallium zinc oxide semiconductors are different, so these results provide guidance for the future material definition in the simulation of indium gallium zinc oxide semiconductor devices with specific manufacturing processes. At the same time, the simulation of indium gallium zinc oxide semiconductor flexible device and its lighting characteristics are also discussed in this paper. The simulation results of the former show that there is no difference in device characteristics between planar devices and curved devices, but this result is obtained in the absence of stress model. It can not be used as a proof of the applicability of indium gallium zinc oxide semiconductors in flexible devices. In the latter simulation, we observe the effect of light on indium gallium zinc oxide semiconductor devices, but the effect is similar to that of hydrogenated amorphous silicon in the absence of relevant simulation models. That is, light only increases the turn-off current of the device, but lacks its unique effect on the threshold voltage of indium gallium zinc oxide semiconductor devices.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.2

【相似文献】