一种新型低功耗电流模式CMOS带隙基准设计
发布时间：2019-05-23 06:16
【摘要】：为了降低传统带隙基准源的功耗和面积,提出了一种新型基于电流模式高阶曲率修正的带隙基准电压源电路。通过改进的电流模式曲率校正方法实现高阶温度补偿,并且通过集电极电流差生成绝对温度成正比PTAT(Proportional To Absolute Temperature)电流,因此所需电阻以及双极型晶体管BJT(Bipolar Junction Transistor)数量更少。采用标准0.35μm CMOS技术对提出电路进行了具体实现。测量结果显示,温度在-40℃～130℃之间时,电路温度系数为6.85×10~(-6)/℃,且能产生508.5 mV的基准电压。相比其他类似电路,当供电电源为3.3 V时,提出电路的整体静态电流消耗仅为9.8μA,面积仅为0.09 mm~2。
[Abstract]:In order to reduce the power consumption and area of the traditional bandgap reference source, a new bandgap voltage reference circuit based on current mode high order curvature correction is proposed. The high order temperature compensation is realized by the improved current mode curvature correction method, and the absolute temperature is proportional to the PTAT (Proportional To Absolute Temperature) current by the collector current difference. As a result, the required resistance and the number of Bipolar transistor BJT (Bipolar Junction Transistor) are even smaller. The standard 0.35 渭 m CMOS technology is used to realize the proposed circuit. The measurement results show that when the temperature is between-40 鈩，
本文编号：2483668
[Abstract]:In order to reduce the power consumption and area of the traditional bandgap reference source, a new bandgap voltage reference circuit based on current mode high order curvature correction is proposed. The high order temperature compensation is realized by the improved current mode curvature correction method, and the absolute temperature is proportional to the PTAT (Proportional To Absolute Temperature) current by the collector current difference. As a result, the required resistance and the number of Bipolar transistor BJT (Bipolar Junction Transistor) are even smaller. The standard 0.35 渭 m CMOS technology is used to realize the proposed circuit. The measurement results show that when the temperature is between-40 鈩，
本文编号：2483668
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