一种新型SiC SBD的高温反向恢复特性
发布时间：2019-06-02 06:02
【摘要】：与传统硅基功率二极管相比,碳化硅肖特基势垒二极管(SiC SBD)可提高开关频率并大幅减小开关损耗,同时有更高的耐压范围。设计并制作了具有场限环结终端和Ti肖特基接触的1.2 kV/30 A SiC SBD器件,研究了该SiC SBD在100~300℃时的反向恢复特性。实验结果表明,温度每上升100℃,SiC SBD反向电压峰值增幅为5%左右,而反向恢复电流与反向恢复时间受温度影响不大;温度每升高50℃,反向恢复损耗功率峰值降低5%。实验结果表明该SiC SBD在高温下能够稳定工作,且具有良好的反向恢复特性,适用于卫星、航空和航天探测、石油以及地热钻井探测等需要大功率、耐高温和高速器件的领域。
[Abstract]:Compared with the traditional silicon-based power diode, silicon carbide Schottky barrier diode (SiC SBD) can increase the switching frequency and greatly reduce the switching loss, and has a higher voltage range. A 1.2 kV/30 A SiC SBD device with field limited loop junction terminal and Ti Schottky contact is designed and fabricated. The reverse recovery characteristics of the SiC SBD at 100 鈮，
本文编号：2490884
[Abstract]:Compared with the traditional silicon-based power diode, silicon carbide Schottky barrier diode (SiC SBD) can increase the switching frequency and greatly reduce the switching loss, and has a higher voltage range. A 1.2 kV/30 A SiC SBD device with field limited loop junction terminal and Ti Schottky contact is designed and fabricated. The reverse recovery characteristics of the SiC SBD at 100 鈮，
本文编号：2490884
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