220GHz太赫兹倍频链路研究

发布时间：2019-06-06 08:23

【摘要】：太赫兹技术在信息科学、空间科学、医学以及材料科学等学科上都有极高的开发空间和应用前景。尤其是长波波段(100GHz-300GHz),在雷达、通信和安检等系统中都体现出了极高的实用价值。目前太赫兹应用系统的发展主要受限于太赫兹波的产生,其中基于半导体器件由低频微波向太赫兹频段发展的倍频源具备高稳定性、高集成度、低成本等优势而备受关注。220GHz为大气传输窗口,国内已有多家研究机构进行该频段处的通信或雷达系统验证研究,其中固态倍频源是收发系统中最重要的部分之一。本文基于肖特基二极管研究倍频链路,该系统可为220GHz收发系统提供射频源,也可以为440GHz收发系统提供本振源。基于GaAs肖特基二极管研制出了220GHz二倍频器,首先建立二极管芯片三维电磁模型并提取其特性参数,然后分步研究二倍频器各无源模块,利用谐波平衡法对倍频器整体电路进行优化,最终对该二倍频器进行实验研究。仿真结果表明,当驱动功率为150mW时,二倍频器工作状态达到最佳,在210GHz-230GHz频带内倍频效率都大于15%,在211GHz处达到最大为41%;测试结果表明,当驱动功率为30mW的宽带稳幅源时,倍频效率在197-230GHz内都大于10%,在218GHz处输出功率最高,为7.13mW,对应效率为24%,与同等情况下的仿真结果吻合;若具备更大功率驱动源,该二倍频器工作性能会进一步提升。基于GaN肖特基二极管研制出了110GHz三倍频器,分析GaN材料的特点以及GaN二极管的可行性,并参考GaAs二极管研究GaN基平面肖特基二极管芯片,利用场路结合的办法建立二极管三维电磁模型,最终对110GHz三倍频器进行试验研究。仿真结果表明,当驱动功率为1.5W时,倍频器工作状态最佳,倍频效率为7%;测试结果表明,当驱动功率为200mW时,最大输出功率为2.7mW,倍频器效率会随着驱动功率增加而进一步提升。本文研制的220GHz二倍频器工作性能在国内同频段内处于领先地位,联合研制的GaN基平面肖特基二极管对在国内也属于开创性工作,为高功率太赫兹倍频器设计积累了一定经验。
[Abstract]:Terahertz technology has a high development space and application prospect in information science, space science, medicine and material science. Especially in long wave section (100GHz-300GHz), it is of great practical value in radar, communication and security inspection systems. At present, the development of terahertz application system is mainly limited by the generation of terahertz wave. The frequency doubling source based on the development of semiconductor devices from low frequency microwave to terahertz frequency band has high stability and high integration. 220 GHz is an atmospheric transmission window. A number of domestic research institutions have carried out communication or radar system verification research in this frequency band, among which solid-state frequency doubling source is one of the most important parts of the transceiver system. In this paper, the frequency doubling link is studied based on Schottky diode. The system can provide radio frequency source for 220GHz transceiver system and local oscillator source for 440GHz transceiver system. Based on GaAs Schottky diode, a 220GHz frequency multiplier is developed. firstly, the three-dimensional electromagnetic model of the diode chip is established and its characteristic parameters are extracted, and then the passive modules of the frequency multiplier are studied step by step. The harmonic balance method is used to optimize the whole circuit of the frequency multiplier, and finally, the experimental study of the frequency multiplier is carried out. The simulation results show that when the driving power is 150mW, the working state of the frequency multiplier is the best, the frequency doubling efficiency is more than 15% in the 210GHz-230GHz band, and the maximum is 41% at the 211GHz. The test results show that when the driving power is the broadband amplitude stable source of 30mW, the frequency doubling efficiency is more than 10% in 197-230GHz, the highest output power is 7.13 MW at 218GHz, and the corresponding efficiency is 24%, which is in good agreement with the simulation results under the same condition. If there is a larger power drive source, the performance of the frequency multiplier will be further improved. Based on GaN Schottky diode, 110GHz triple frequency multiplier is developed. the characteristics of GaN material and the feasibility of GaN diode are analyzed, and the GaN base plane Schottky diode chip is studied with reference to GaAs diode. The three-dimensional electromagnetic model of diode is established by using the method of field-circuit combination, and finally the experimental study of 110GHz triple frequency multiplier is carried out. The simulation results show that when the driving power is 1.5 W, the frequency multiplier has the best working state and the frequency doubling efficiency is 7%. The test results show that when the driving power is 200mW, the maximum output power is 2.7 MW, and the frequency multiplier efficiency will be further improved with the increase of driving power. The performance of 220GHz frequency multiplier developed in this paper is in the leading position in the same frequency band in China. The GaN base plane Schottky diode pair also belongs to groundbreaking work in China, which accumulates some experience for the design of high power terahertz frequency multiplier.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN771

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