IGBT失效分析技术
发布时间：2019-06-19 01:26
【摘要】：自20世纪60年代起,电力电子技术的出现为提高能源利用率,实现电能变换以及实施各国的新能源战略开辟了新的道路。现今,电力电子技术的发展极大的帮助了人类实现对自然资源的合理、高效以及可持续利用。 目前,以IGBT (Insulated Gate Bipolat Transistor,绝缘栅双极型晶体管)和功率MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor,金属-氧化层栅场效应管)为首的大功率器件是各种电力电子装置的核心。当电力电子装置出现故障时,经常是由于电力电子器件发生损坏。因此,透彻的了解电路系统并合理地使用功率器件,不但可以规避装置故障风险,也可以更好地利用器件的电压、电流裕量,提高器件利用率。反过来,研究器件在不同应用条件下的失效模式,则可以更好地理解器件工作原理以及失效情况,提高器件实际应用寿命。 近年来,对器件的失效分析已经成为电力电子领域中一个研究热点。本论文基于现代电力电子装置中应用最广的IGBT器件,利用静态测试仪371b、SEM (Scanning Electron Microscope,扫描电子显微镜)、EDX (Energy Dispersive X-Ray Spectroscopy、能量色散X射线光谱仪)、FIB (Focused Ion beam,聚焦离子束)切割、TEM (Thermal Emmision Microscope,高精度热成像分析仪)等多种分析手段对模块应用当中失效的IGBT芯片进行电特性分析、芯片解剖并完成失效分析,并基于相应的失效模式提出了封装改进方案。 1.对于栅极失效的情况,本论文先经过电特性测试完成预分析,并利用THEMOS分析出栅极漏电流通路,找到最小点并进行失效原因分析,针对相应原因提出改进方案。 2.针对开通与关断瞬态过电流失效,采用研磨、划片等手段进行芯片的解剖。并用SEM与EDX对芯片损伤程度进行评估分析,以文献为参考进行失效原因分析,利用saber仿真进行失效原因验证。 3.针对通态过电流失效模式,采用解剖分析来评估损伤情况,探究失效原因,并采用电感钳位电路进行实验验证。 4.针对过电压失效模式,采用芯片解剖方式来分析失效点以及失效情况,基于文献归纳并总结出传统失效原因,并通过大量实验得出基于封装的失效原因,最后采用saber仿真加以验证。
[Abstract]:Since 1960s, the emergence of power electronics technology has opened up a new way to improve energy efficiency, realize electric energy conversion and implement the new energy strategy of various countries. Nowadays, the development of power electronics technology has greatly helped human beings to realize the rational, efficient and sustainable utilization of natural resources. At present, high-power devices headed by IGBT (Insulated Gate Bipolat Transistor, insulated gate bipolar transistors and power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal-oxide gate field effect transistors) are the core of various power electronic devices. When the power electronic device fails, it is often due to the damage of the power electronic device. Therefore, a thorough understanding of the circuit system and the rational use of power devices can not only avoid the fault risk of the device, but also make better use of the voltage and current margin of the device and improve the utilization rate of the device. On the other hand, by studying the failure mode of the device under different application conditions, the working principle and failure situation of the device can be better understood, and the practical application life of the device can be improved. In recent years, the failure analysis of devices has become a research focus in the field of power electronics. In this paper, based on the most widely used IGBT devices in modern power electronic devices, the electrical characteristics of IGBT chips which have failed in module applications are analyzed by using static tester 371b,), EDX (Energy Dispersive X-Ray Spectroscopy, (Scanning Electron Microscope, scanning electron microscope), EDX (Energy Dispersive X-Ray Spectroscopy, energy dispersive X-ray spectrometer), FIB (Focused Ion beam, focused ion beam (, TEM (Thermal Emmision Microscope, high precision thermal imaging analyzer) and other analytical methods. The chip is dissected and the failure analysis is completed, and an improved package scheme is proposed based on the corresponding failure mode. 1. For the case of gate failure, this paper first completes the pre-analysis through the electrical characteristic test, and uses THEMOS to analyze the leakage current circuit of the gate, finds out the minimum point and analyzes the failure cause, and puts forward the improvement scheme according to the corresponding reason. two銆，
本文编号：2501952
[Abstract]:Since 1960s, the emergence of power electronics technology has opened up a new way to improve energy efficiency, realize electric energy conversion and implement the new energy strategy of various countries. Nowadays, the development of power electronics technology has greatly helped human beings to realize the rational, efficient and sustainable utilization of natural resources. At present, high-power devices headed by IGBT (Insulated Gate Bipolat Transistor, insulated gate bipolar transistors and power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal-oxide gate field effect transistors) are the core of various power electronic devices. When the power electronic device fails, it is often due to the damage of the power electronic device. Therefore, a thorough understanding of the circuit system and the rational use of power devices can not only avoid the fault risk of the device, but also make better use of the voltage and current margin of the device and improve the utilization rate of the device. On the other hand, by studying the failure mode of the device under different application conditions, the working principle and failure situation of the device can be better understood, and the practical application life of the device can be improved. In recent years, the failure analysis of devices has become a research focus in the field of power electronics. In this paper, based on the most widely used IGBT devices in modern power electronic devices, the electrical characteristics of IGBT chips which have failed in module applications are analyzed by using static tester 371b,), EDX (Energy Dispersive X-Ray Spectroscopy, (Scanning Electron Microscope, scanning electron microscope), EDX (Energy Dispersive X-Ray Spectroscopy, energy dispersive X-ray spectrometer), FIB (Focused Ion beam, focused ion beam (, TEM (Thermal Emmision Microscope, high precision thermal imaging analyzer) and other analytical methods. The chip is dissected and the failure analysis is completed, and an improved package scheme is proposed based on the corresponding failure mode. 1. For the case of gate failure, this paper first completes the pre-analysis through the electrical characteristic test, and uses THEMOS to analyze the leakage current circuit of the gate, finds out the minimum point and analyzes the failure cause, and puts forward the improvement scheme according to the corresponding reason. two銆，
本文编号：2501952
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