基于溶液法制备N-杂化噻吩类有机场效应晶体管及性能研究

发布时间：2019-07-03 15:50

【摘要】：无机电子器件问世以后,基于有机半导体的电子器件的应用前景随着时间的推移而越发广阔,比如有机发光二极管、有机薄膜晶体管等纳米器件。其中有机场效应晶体管,简称OFET(organic thin-film transistor),在经历了多年的调查研究后,成为研究的热点。在本文中,使用(E)-2-(2')-二(苯并呋喃)-4,4'-二(异丙基)-2,3-噻吩并比诺酮-6,6-二乙烯(BFTTME)、(E)-2-(2')-二(苯并呋喃)-4,4'-二(异十一烷基)-2,3-噻吩并比诺酮-6,6-二乙烯(BFTTMD)和聚3-己基噻吩(P3HT)作为有源层材料,使用旋涂法和气相沉积在硅衬底上制备有机场效应晶体管,并且使用不同浓度的活性层掺杂材料制备OTFT,讨论其电性能,表面形貌,晶相变化和机理。此外,以照相纸为基底采用喷墨印刷方法制备了具有边栅结构的有机场效应晶体管,并制备了银电极,有机活性层和电介质层。通过本文实验,得到以下实验结果:(1)使用有机半导体材料BFTTME和BFTTMD作为活性层制备有机场效应晶体管,所制的器件载流子迁移率可以达到10-3数量级(单位为cm2 V-1 s-1),开关比可以达到104数量级。(2)基于有机半导体材料BFTTME,掺杂P3HT,比例分别为10%、20%、30%、40%、50%、60%、70%、80%、90%,测试器件电学性能得知,掺杂比例为20%时,对应的有机场效应晶体管性能最优,载流子迁移率为1.2×10-2 cm2 V-1 s-1。(3)使用喷墨打印机分别在相片纸上打印银电极、活性层和介电层来制备边栅结构的有机场效应晶体管,初步研究了银电极的打印制备,活性层和介电层墨水的制备和打印,制备出具有场效应特征曲线的器件,载流子迁移率可以达到10-3数量级(单位为cm2 V-1 s-1),开关比可以达到102数量级。
[Abstract]:After the advent of the inorganic electronic device, the application prospect of the electronic device based on the organic semiconductor is more and more extensive over time, such as organic light-emitting diodes, organic thin-film transistors, and the like. The field effect transistor (OFET) is the focus of the study after many years of investigation and research. in this context, (E) -2-(2 ')-bis (benzo-1-)-4,4'-di (isopropyl)-2,3-ethanone is use and is specific to noone-6,6-divinyl (BFTT), (E) -2-(2 ')-bis (benzophenyl) -4,4'-di (iso-undecyl) -2,3-ethanone and binnoone-6,6-divinyl (BFTT MD) and poly 3-hexyl phthalate (P3HT) as active layer material, an aerodrome effect transistor is prepared on a silicon substrate using a spin coating method and a gas phase deposition, And using active layer doping materials with different concentrations to prepare the OTFT, and the electric property, the surface morphology, the crystal phase change and the mechanism of the OTFT are discussed. In addition, an organic field effect transistor with a side gate structure is prepared by using a photographic paper as a substrate by an ink-jet printing method, and a silver electrode, an organic active layer and a dielectric layer are prepared. The results of this paper are as follows: (1) The organic semiconductor material BFTME and BFTT MD are used as the active layer to prepare the organic field effect transistor. The carrier mobility of the fabricated device can be on the order of 10-3 (in cm2 V-1s-1), and the switching ratio can reach the order of 104. (2) Based on the organic semiconductor material BFTME and the doping P3HT, the proportion is 10%,20%,30%,40%,50%,60%,70%,80%,90%, the electrical performance of the test device is known, and when the doping proportion is 20%, the performance of the corresponding organic field effect transistor is optimal, The carrier mobility is 1.2 to 10-2 cm2 V-1s-1. and (3) using an ink-jet printer to print the silver electrode, the active layer and the dielectric layer on the phase-piece paper to prepare the organic field effect transistor of the side gate structure, and the preparation and printing of the printing preparation, the active layer and the dielectric layer ink of the silver electrode are preliminarily studied, The device with the field effect characteristic curve is prepared, the carrier mobility can reach the order of 10-3 (in cm2 V-1s-1), and the switching ratio can reach the order of 102.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386

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