考虑量子效应的场效应晶体管电学特性的研究

发布时间：2019-07-06 15:02

【摘要】：场效应晶体管(FET)是一种电压控制型的半导体器件,以其制造简单,易于实现和性能稳定等优点,受到人们的关注,作为放大与整流器件运用于集成电路。以金属-氧化物-半导体场效应晶体管(MOSFET)为代表的场效应晶体管广泛运用于大规模及超大规模的集成电路中,器件的高度集成化使其尺寸越来越小。当晶体管的尺寸达到纳米量级左右时,由于它的几何尺寸与电子的波长可以比拟,量子效应对器件的影响不能忽视。在量子效应的MOSFET的研究中,二维电子气的研究是其基础。Fang和Howard提出的Fang-Howard(FH)波函数描述二维电子气,Stern和Howard运用变分法确定其中的参量之后,人们在以后计算量子效应的器件当中广泛运用这个结果。而在极薄氧化层MOSFET的隧穿效应研究中,波函数会穿透Si/SiO2界面,渗透到氧化层的波函数在Si/SiO2界面处为有限值而不是截断在界面。同时大多数计算隧穿效应的模型都运用Stern所确定的波函数结果,而Stern波函数的假设是波函数截断在界面。本文所做的主要工作以及结论:⒈我们根据Stern波函数,提出更精确更简单的波函数体系描述二维电子气,联立的Schr?dinger-Poisson方程用来确定波函数的参量。⒉在极薄MOSFET的隧穿效应中,我们对Stern波函数作平移,提出渗透波函数;并对它进行有限势垒的修正,使它符合实际的MOSFET能带结构。隧穿模型中包含的非零的界面波函数、隧穿概率、基态电子能量都是基于有限势垒修正的。
[Abstract]:Field effect transistor (FET) is a kind of voltage-controlled semiconductor device. It has attracted people's attention because of its simple fabrication, easy implementation and stable performance. It has been used in integrated circuits as amplifier and rectifier devices. The field effect transistors represented by metal-oxide-semiconductor field effect transistors (MOSFET) are widely used in large-scale and very large-scale integrated circuits. The high integration of the devices makes their sizes smaller and smaller. When the size of the transistor reaches the nanometer order of magnitude, because its geometric size is comparable to the wavelength of the electron, the influence of quantum effect on the device can not be ignored. In the study of MOSFET of quantum effect, the study of two-dimensional electron gas is its foundation. The Fang-Howard (FH) wave function proposed by Fang and Howard describes the two-dimensional electron gas. After Stern and Howard determine the parameters of the two-dimensional electron gas by the method of variation, this result is widely used in the devices that calculate the quantum effect in the future. In the study of tunneling effect of very thin oxide layer MOSFET, the wave function will penetrate the Si/SiO2 interface, and the wave function permeated into the oxide layer will be finite value at the Si/SiO2 interface rather than truncated at the interface. At the same time, most models for calculating tunneling effect use the wave function results determined by Stern, and the assumption of Stern wave function is that the wave function is truncated at the interface. The main work and conclusions of this paper are as follows: 1 according to the Stern wave function, we propose a more accurate and simpler wave function system to describe the two-dimensional electron gas, and the simultaneous Schr?dinger-Poisson equation is used to determine the parameters of the wave function. 2 in the tunneling effect of very thin MOSFET, we translate the Stern wave function and propose the osmotic wave function, and modify the finite barrier to make it accord with the actual MOSFET band structure. The non-zero interface wave function, tunneling probability and ground state electron energy contained in the tunneling model are modified by finite barrier.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

【相似文献】