太阳能电池板用多晶硅的退火行为研究
发布时间：2019-07-11 09:34
【摘要】：对太阳能电池板用铸造多晶硅进行了不同温度的退火处理,用光学显微镜、扫描电子显微镜和微波光电导衰减仪等研究了退火温度对多晶硅显微形貌和少子寿命的影响。结果表明,退火温度升高使得位错尺寸不断减小而位错密度不断增大,位错会不断向晶界处富集,且退火温度越高,这种聚集趋势越显著;随着退火温度升高,多晶硅的少子寿命先缩短后延长,退火温度950℃时少子寿命最短。
[Abstract]:The cast polysilicon for solar panels was annealed at different temperatures. The effects of annealing temperature on the microstructure and minority carrier lifetime of polysilicon were studied by means of optical microscope, scanning electron microscope and microwave photoconductive Attenuator. The results show that with the increase of annealing temperature, the dislocation size decreases and the dislocation density increases, and the dislocation is enriched to the grain boundary, and the higher the annealing temperature is, the more significant the aggregation trend is. With the increase of annealing temperature, the minority carrier lifetime of polysilicon is shortened at first and then prolonged, and the minority carrier lifetime is the shortest at 950 鈩，
本文编号：2513055
[Abstract]:The cast polysilicon for solar panels was annealed at different temperatures. The effects of annealing temperature on the microstructure and minority carrier lifetime of polysilicon were studied by means of optical microscope, scanning electron microscope and microwave photoconductive Attenuator. The results show that with the increase of annealing temperature, the dislocation size decreases and the dislocation density increases, and the dislocation is enriched to the grain boundary, and the higher the annealing temperature is, the more significant the aggregation trend is. With the increase of annealing temperature, the minority carrier lifetime of polysilicon is shortened at first and then prolonged, and the minority carrier lifetime is the shortest at 950 鈩，
本文编号：2513055
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