Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEM

发布时间：2020-12-09 19:13

　　A scalable large-signal model of AlGa N/Ga N High electron mobility transistors（HEMTs）suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current（Ids） formulation with a geometry-dependent thermal resistance（Rth） and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance（gm）,which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identi... 

【文章来源】：Chinese Journal of Electronics. 2017年05期 第952-959页

【文章页数】：8 页

【文章目录】：
1. Drain-source current
2. Geometry-dependent thermal resistance
3. Trapping effect dispersive model
4. Extrinsic and intrinsic parasitic parameters


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