Distribution of electron traps in SiO 2 /HfO 2 nMOSFET

发布时间：2021-01-10 16:09

　　In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO₂ layer have been extracted. Two peaks are observed, which are located at ?E ^-1.0 eV and-1.43 eV, respectively. It is found that the former one is close to the SiO₂/HfO₂ interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time ha... 

【文章来源】：Chinese Physics B. 2016,25(05)

【文章页数】：6 页


本文编号：2969006