Etching mask optimization of InAs/GaSb superlattice mid-wave

发布时间：2021-03-12 01:10

　　In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO₂ mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO₂ hard mask has the R₀A of 9.7×10⁶ Ω·cm²,while the detector using the photore... 

【文章来源】：Chinese Physics B. 2017,26(04)

【文章页数】：4 页


本文编号：3077419