High-efficiency InGaN/AlInGaN multiple quantum wells with la

发布时间：2021-05-07 16:59

　　A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells（MQWs） is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning ... 

【文章来源】：Chinese Physics B. 2017,26(01)EISCI

【文章页数】：5 页


本文编号：3173756