Characterization of Interface State Density of Ni/p-GaN Stru

发布时间：2021-06-26 08:08

　　For the frequency range of 1 kHz-10 MHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage（C-V） and conductance-frequency-voltage（G-f-V） measurements at room temperature.To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance（R_s） on high-frequency（5 MHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from ... 

【文章来源】：Chinese Physics Letters. 2017,34(09)SCICSCD

【文章页数】：5 页

【参考文献】：
期刊论文
[1]表面处理降低GaAs界面态密度的研究[J]. 肖和平,王瑞瑞.  电子器件. 2019(01)



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