Total-Ionizing-Dose-Induced Body Current Lowering in the 130
发布时间：2021-07-04 16:12
The body current lowering effect of 130 nm partially depleted silicon-on-insulator（PDSOI） input/output（I/O）n-type metal-oxide-semiconductor field-effect transistors（NMOSFETs） induced by total-ionizing dose is observed and analyzed. The decay tendency of current ratio of body current and drain current Ib/Id is also investigated.Theoretical analysis and TCAD simulation results indicate that the physical mechanism of body current lowering effect is the reduction of maximum lat...
【文章来源】：Chinese Physics Letters. 2017,34(01)SCICSCD
【文章页数】：4 页
本文编号：3265110
【文章来源】：Chinese Physics Letters. 2017,34(01)SCICSCD
【文章页数】：4 页
本文编号：3265110
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