Characterization of the effects of nitrogen and hydrogen pas

发布时间：2021-07-27 01:02

　　We investigate the effects of NO annealing and forming gas（FG） annealing on the electrical properties of a SiO₂/SiC interface by low-temperature conductance measurements.With nitrogen passivation,the density of interface states(D_IT) is significantly reduced in the entire energy range,and the shift of flatband voltage,△V_FB,is effectively suppressed to less than 0.4 V.However,very fast states are observed after NO annealing and the response frequencies are higherth... 

【文章来源】：Journal of Semiconductors. 2016,37(02)CSCD

【文章页数】：7 页


本文编号：3304740