高功率GaSb基2.6微米InGaAsSb/AlGaAsSbⅠ型量子阱室温工作激光器（英文）
发布时间：2021-07-28 15:45
成功制备出2.6μmGaSb基I型InGaAsSb/AlGaAsSb量子阱高功率半导体激光器.利用分子束外延设备（MBE）生长出器件的材料结构.为了得到更好的光学质量,将量子阱的生长温度优化至500℃,并将量子阱的压应变调节为1.3%.制备了脊宽100μm、腔长1.5mm的激光单管器件.在未镀膜下该激光器实现了最大328mW室温连续工作,阈值电流密度为402A/cm2,在脉冲工作模式下,功率达到700mW.
【文章来源】：红外与毫米波学报. 2017,36(03)北大核心EISCICSCD
【文章页数】：4 页
【部分图文】：
型量子阱激光器材料外延结构和能带示意图
the200nmSiO2insulationlayerdepositedbyPECVD．Afterthatthep-sideTi/Pt/Auelectrodewasformedbymagnetismsputtersystem．Figure4showsthescanningelectronmi-croscope(SEM)cross-sectionimageofthelaser．Then-sideOhmcontactswererealizedbyfast-annealingthee-vaporatedAuGeNi/Aufilmafterthewaferswerethinnedto180μm．Finallythewaferswerecleavedintosinglee-mitters，andallthelaserdevicesweremountedp-sidedownoncopperheatsinkswithindiumsolder．Fig．4SEMimageofthecross-sectionofthelaserdiode图4激光器剖面的扫描电子显微镜(SEM)照片2ＲesultsanddiscussionAllthelaserperformancewasmeasuredwithoutfac-etcoatingatroomtemperature(20℃)．Themeasure-mentsoflasersoutputpowerweredonebyapyroelectricdetectorandtheemissionspectrawerescannedusingaFouriertransforminfraredspectroscopy(FTIＲ)system．Figure5showsthelaseropticalpower-current-voltage(P-I-V)curve，wallplugefficiency(WPE)andcorre-spondingemissionspectrum(at2Ainjectioncurrent)inCWregime．Thecentralwavelengthwasupto2．6μmwithalowthresholdcurrentdensityofJth=402A/cm2andaslopeefficiencyof0．137W/A．Outputpowerreachedupto328mWattheinjectioncurrentof3．8A，thenasthecurrentincreasedfurthertheoutputpowerwaslimitedforthereasonofheataccumulation．ThemaximumvalueofWPEis7．24%at1．5A，andthereisstillroomforimprovementthroughthereductionofseriesresistances(Ｒs)whichwas0．28Ωbynow．Byreduc-ingAlcompositionofthecladdinglayersandextrapro-cessionafterthepolishingofn-sidesubstra
ingAlcompositionofthecladdinglayersandextrapro-cessionafterthepolishingofn-sidesubstrate，theＲswillbereducedfurthertoimprovetheWPE［15］．Figure6showstheoutputpowercharacteristicofthedeviceoper-atinginpulsecondition(100μscurrentpulsesata1kHzrepetitionrate)．Thelaseremittedashighas700mWopticalpoweroccurredat7．5Afrombothfacetsinpulsemodewhichishighenoughforgassensingapplica-tion．Fig．5P-I-VandWPEcharacteristicsofthelaseremittingatI=2AintheCWmodeatＲTwithuncoatedfacets图5激光器室温连续工作模式下的光功率-电流-电压关系和不同电流下的插头效率以及在注入电流I=2A时激光器的激射谱Theemissionspectraandcentralwavelengthagainstcurrent(λ-I)characteristicsaredepictedinFig．7．Fromtheλ-Icurvewecanclearlyfigureoutthatthewavelengthshiftedlinearlytowardsthelongerwavelengthasthedrivingcurrentincreased．Theslopeofthecurvewasfittedtobe22nm/A．Thecentralwavelengthred-shiftedfrom2．6136μmto2．6268μmwhentheinjec-tioncurrentraisedfrom1．7Ato2．3Amainlyduetothethermaleffectwhichbroughtabouttheelongatingcavityanddecreasingbandgap［16］．259
【参考文献】：
期刊论文
[1]2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography[J]. 杨成奥,张宇,廖永平,邢军亮,魏思航,张立春,徐应强,倪海桥,牛智川. Chinese Physics B. 2016(02)
[2]High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells[J]. 廖永平,张宇,邢军亮,魏思航,郝宏玥,王国伟,徐应强,牛智川. Journal of Semiconductors. 2015(05)
[3]High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy[J]. 邢军亮,张宇,徐应强,王国伟,王娟,向伟,倪海桥,任正伟,贺振宏,牛智川. Chinese Physics B. 2014(01)
[4]Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers[J]. 张宇,王国伟,汤宝,徐应强,徐云,宋国锋. 半导体学报. 2011(10)
本文编号：3308192
【文章来源】：红外与毫米波学报. 2017,36(03)北大核心EISCICSCD
【文章页数】：4 页
【部分图文】：
型量子阱激光器材料外延结构和能带示意图
the200nmSiO2insulationlayerdepositedbyPECVD．Afterthatthep-sideTi/Pt/Auelectrodewasformedbymagnetismsputtersystem．Figure4showsthescanningelectronmi-croscope(SEM)cross-sectionimageofthelaser．Then-sideOhmcontactswererealizedbyfast-annealingthee-vaporatedAuGeNi/Aufilmafterthewaferswerethinnedto180μm．Finallythewaferswerecleavedintosinglee-mitters，andallthelaserdevicesweremountedp-sidedownoncopperheatsinkswithindiumsolder．Fig．4SEMimageofthecross-sectionofthelaserdiode图4激光器剖面的扫描电子显微镜(SEM)照片2ＲesultsanddiscussionAllthelaserperformancewasmeasuredwithoutfac-etcoatingatroomtemperature(20℃)．Themeasure-mentsoflasersoutputpowerweredonebyapyroelectricdetectorandtheemissionspectrawerescannedusingaFouriertransforminfraredspectroscopy(FTIＲ)system．Figure5showsthelaseropticalpower-current-voltage(P-I-V)curve，wallplugefficiency(WPE)andcorre-spondingemissionspectrum(at2Ainjectioncurrent)inCWregime．Thecentralwavelengthwasupto2．6μmwithalowthresholdcurrentdensityofJth=402A/cm2andaslopeefficiencyof0．137W/A．Outputpowerreachedupto328mWattheinjectioncurrentof3．8A，thenasthecurrentincreasedfurthertheoutputpowerwaslimitedforthereasonofheataccumulation．ThemaximumvalueofWPEis7．24%at1．5A，andthereisstillroomforimprovementthroughthereductionofseriesresistances(Ｒs)whichwas0．28Ωbynow．Byreduc-ingAlcompositionofthecladdinglayersandextrapro-cessionafterthepolishingofn-sidesubstra
ingAlcompositionofthecladdinglayersandextrapro-cessionafterthepolishingofn-sidesubstrate，theＲswillbereducedfurthertoimprovetheWPE［15］．Figure6showstheoutputpowercharacteristicofthedeviceoper-atinginpulsecondition(100μscurrentpulsesata1kHzrepetitionrate)．Thelaseremittedashighas700mWopticalpoweroccurredat7．5Afrombothfacetsinpulsemodewhichishighenoughforgassensingapplica-tion．Fig．5P-I-VandWPEcharacteristicsofthelaseremittingatI=2AintheCWmodeatＲTwithuncoatedfacets图5激光器室温连续工作模式下的光功率-电流-电压关系和不同电流下的插头效率以及在注入电流I=2A时激光器的激射谱Theemissionspectraandcentralwavelengthagainstcurrent(λ-I)characteristicsaredepictedinFig．7．Fromtheλ-Icurvewecanclearlyfigureoutthatthewavelengthshiftedlinearlytowardsthelongerwavelengthasthedrivingcurrentincreased．Theslopeofthecurvewasfittedtobe22nm/A．Thecentralwavelengthred-shiftedfrom2．6136μmto2．6268μmwhentheinjec-tioncurrentraisedfrom1．7Ato2．3Amainlyduetothethermaleffectwhichbroughtabouttheelongatingcavityanddecreasingbandgap［16］．259
【参考文献】：
期刊论文
[1]2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography[J]. 杨成奥,张宇,廖永平,邢军亮,魏思航,张立春,徐应强,倪海桥,牛智川. Chinese Physics B. 2016(02)
[2]High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells[J]. 廖永平,张宇,邢军亮,魏思航,郝宏玥,王国伟,徐应强,牛智川. Journal of Semiconductors. 2015(05)
[3]High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy[J]. 邢军亮,张宇,徐应强,王国伟,王娟,向伟,倪海桥,任正伟,贺振宏,牛智川. Chinese Physics B. 2014(01)
[4]Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers[J]. 张宇,王国伟,汤宝,徐应强,徐云,宋国锋. 半导体学报. 2011(10)
本文编号：3308192
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