GaN HEMT大信号模型与高功率放大器验证
发布时间：2021-08-14 12:18
移动通信推动了射频微波半导体器件和电路技术的多项进步。这些进步不仅促成了移动通信革命,也为电路和系统设计人员提供了许多各种各样的用于产品实现的方法和途径。设计人员通过简单地优化GaN集成电路以实现饱和输出功率和更高效率的时代早已过去,今天的电路和系统工程师必须更多地了解产品开发的整个过程。例如器件物理学,建模,表征,电路设计,体系结构和应用,信号调制格式,测量和行业标准等都是成功设计现代接收和传输组件所需的。在许多工程和设计的决定的时候,必须考虑到成本平衡,性能和周期时间以及同时满足具有挑战性的产品规格。具体的例子比如选择最佳的半导体技术,器件特性和建模,电路架构,线性化策略以及整体系统级考虑。微波晶体管建模的重要性来自于晶体管是高频电路中的关键部件,高频电路是现代无线通信系统例如移动设备等的核心。目前,我们正在见证无线通信应用的激增以及晶体管技术的不断进步,这些技术使高频晶体管建模成为人们非常感兴趣的热门话题。此外,GaN HEMT等宽带隙半导体在电路,设计和生产方面都非常出色。与高线性度和高效率功率放大器一样,AlGaN/GaN HEMT将GaN的材料特性与HEMT的工作原理相结合...
【文章来源】：中国科学技术大学安徽省 211工程院校 985工程院校
【文章页数】：102 页
【学位级别】：博士
【文章目录】：
摘要
ABSTRACT
Notation
Chapter 1 Introduction
1.1 Device and Structure
1.2 Types of Models
1.3 Device Modeling and Selection Criteria
1.4 EQC-Based Analytical Modeling
1.5 Research Methodology and Dissertation outline
Chapter 2 Characterization and Model Parameter Extraction
2.1 Extraction of Parameters for Bare Die
2.2 Model and Parameters for Packaged Transistor
2.3 De-embedding Techniques
2.4 TRL Calibration
2.5 Procedure of Model Parameter Extraction
2.6 De-embedding of GaN HEMT Parasitic(Extrinsic) Elements
2.7 Extraction of the Intrinsic Elements
2.8 DC Modeling
2.9 Charge and Capacitance Modeling
2.10 Large-Signal Model Extraction
2.11 Model Verification
Chapter 3 An Improved GaN HEMT large-signal Model
3.1 A New Trapping Large-Signal Model and Extraction Technique
3.2 Drain Model Equation
3.3 Angelov Model with Trapping Effect and Large-Signal Model Extraction
3.4 New I_(ds) equation
3.4.1 Improve Electro-Thermal Effect
3.4.2 Trapping Temperature Effect
Chapter 4 Power Amplifier Design and Model Verification
4.1 Classes RF Power Amplifiers
4.2 Device Model Validation
4.3 Doherty Power Amplifier LS Model Verification
Chapter 5 2D Material Black Phosphorus and RTD
5.1 Device Fabrication
5.2 Device Characterization
5.3 Existing Models of Negative Resistance Devices for Diodes
5.3.1 Piecewise linear model
5.3.2 Piecewise linear model
5.3.3 Gaussian-exponential combination model
5.3.4 Physics-based model
5.4 New Model for BP RTD
Chapter 6 Conclusions and Future Directions
6.1 Conclusions
6.2 Future Directions
References
Appendix A
Acknowledgements
List of Publications
本文编号：3342452
【文章来源】：中国科学技术大学安徽省 211工程院校 985工程院校
【文章页数】：102 页
【学位级别】：博士
【文章目录】：
摘要
ABSTRACT
Notation
Chapter 1 Introduction
1.1 Device and Structure
1.2 Types of Models
1.3 Device Modeling and Selection Criteria
1.4 EQC-Based Analytical Modeling
1.5 Research Methodology and Dissertation outline
Chapter 2 Characterization and Model Parameter Extraction
2.1 Extraction of Parameters for Bare Die
2.2 Model and Parameters for Packaged Transistor
2.3 De-embedding Techniques
2.4 TRL Calibration
2.5 Procedure of Model Parameter Extraction
2.6 De-embedding of GaN HEMT Parasitic(Extrinsic) Elements
2.7 Extraction of the Intrinsic Elements
2.8 DC Modeling
2.9 Charge and Capacitance Modeling
2.10 Large-Signal Model Extraction
2.11 Model Verification
Chapter 3 An Improved GaN HEMT large-signal Model
3.1 A New Trapping Large-Signal Model and Extraction Technique
3.2 Drain Model Equation
3.3 Angelov Model with Trapping Effect and Large-Signal Model Extraction
3.4 New I_(ds) equation
3.4.1 Improve Electro-Thermal Effect
3.4.2 Trapping Temperature Effect
Chapter 4 Power Amplifier Design and Model Verification
4.1 Classes RF Power Amplifiers
4.2 Device Model Validation
4.3 Doherty Power Amplifier LS Model Verification
Chapter 5 2D Material Black Phosphorus and RTD
5.1 Device Fabrication
5.2 Device Characterization
5.3 Existing Models of Negative Resistance Devices for Diodes
5.3.1 Piecewise linear model
5.3.2 Piecewise linear model
5.3.3 Gaussian-exponential combination model
5.3.4 Physics-based model
5.4 New Model for BP RTD
Chapter 6 Conclusions and Future Directions
6.1 Conclusions
6.2 Future Directions
References
Appendix A
Acknowledgements
List of Publications
本文编号：3342452
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