4H-SiC平面型和沟槽型MOSFET高低温下的特性（英文）
发布时间：2021-08-24 21:32
采用自对准工艺制备了1.2 kV4H-SiC平面型和沟槽型MOSFET器件,并在90～490 K的温度范围内对4H-SiC MOSFET器件的静态和动态特性与商用1.2 kV Si IGBT器件的性能进行了对比研究。4H-SiC MOSFET器件的静态特性包括导通电阻（Ron）和阈值电压（Vth）,而动态特性则重点研究了开关能量损耗（ESW）随温度的变化。首次在低温下针对与沟道缺陷相关的4H-SiC平面型和沟槽型MOSFET的动态导通电阻退化机理进行了定量化分析。实验结果发现4H-SiC平面型MOSFET器件的开启瞬态的延迟较小短,而4H-SiC沟槽型MOSFET器件表现出显著的开启瞬态延迟和动态导通电阻退化现象,在低温下动态电阻退化现象更为严重。CV特性曲线显示动态导通电阻退化是由于沟槽型器件沟道中与工艺相关的缺陷造成的。随着4HSiC沟槽型MOSFET器件制备工艺的不断成熟,工艺相关的缺陷有望得到缓解,从而从根本上消除动态导通电阻的退化。
【文章来源】：微纳电子技术. 2020,57(08)北大核心
【文章页数】：8 页
【部分图文】：
90～490 K内开关损耗的变化趋势比较
As shown in Fig.4,threshold voltage(Vth)of the three devices increases when temperatures decrease.In Fig.4,Vdsis source-drain voltage of the SiC MOSFETs,and Vceis collector-emitter voltage of the Si IGBT.However,Vthof the SiC MOSFETs increases about 4.5 V from500 K to 90 K,which is much larger than that of the Si IGBT(about 2.3 V).It has been reported that the Vthincrease is related to trapped interface electrons[18].Since the SiO2-SiC interface is much worse than the SiO2-Si interface,the temperature effects on threshold voltage of the 4H-SiC MOSFETs are more serious at low temperature com-pared with that of the Si IGBT.3 Switching Characterization
The double pulse testing(DPT)circuit including the under-test-device(DUT),a free-wheeling diode(FWD)and a load inductor[19],as shown in Fig.5,is used for evaluating the switching performance of the DUT.In Fig.5,CVR is the coaxial current shunt,Vdcis the power supply voltage,Rgis the external gate resistance,Lis a load inductor,Vdriveis the driver voltage,and Cdcis a capacitor bank.In order to accurately characterize the transient process in the DUT with an inductive load,parasitic parameters in the circuit must be optimized[20].A1.2 kV SiC Schottky diode is chosen as freewheeling diode paralleled with a load inductor of344μH.A42.3μF capacitor bank(nine 4.7μF capacitors in parallel)is used to ensure a constant DC voltage(VDC)during the DUT switching process.The CVR(SSDN-414-01)is used to accurately measure the current(Id)of the DUT while a Tektronix voltage probe is used to obtain Vds signal during the switching transients.The current and voltage are displayed and stored using Tektronix Digital Oscilloscope(DOP 4104B-L)with 0.4 ns sampling interval.
本文编号：3360760
【文章来源】：微纳电子技术. 2020,57(08)北大核心
【文章页数】：8 页
【部分图文】：
90～490 K内开关损耗的变化趋势比较
As shown in Fig.4,threshold voltage(Vth)of the three devices increases when temperatures decrease.In Fig.4,Vdsis source-drain voltage of the SiC MOSFETs,and Vceis collector-emitter voltage of the Si IGBT.However,Vthof the SiC MOSFETs increases about 4.5 V from500 K to 90 K,which is much larger than that of the Si IGBT(about 2.3 V).It has been reported that the Vthincrease is related to trapped interface electrons[18].Since the SiO2-SiC interface is much worse than the SiO2-Si interface,the temperature effects on threshold voltage of the 4H-SiC MOSFETs are more serious at low temperature com-pared with that of the Si IGBT.3 Switching Characterization
The double pulse testing(DPT)circuit including the under-test-device(DUT),a free-wheeling diode(FWD)and a load inductor[19],as shown in Fig.5,is used for evaluating the switching performance of the DUT.In Fig.5,CVR is the coaxial current shunt,Vdcis the power supply voltage,Rgis the external gate resistance,Lis a load inductor,Vdriveis the driver voltage,and Cdcis a capacitor bank.In order to accurately characterize the transient process in the DUT with an inductive load,parasitic parameters in the circuit must be optimized[20].A1.2 kV SiC Schottky diode is chosen as freewheeling diode paralleled with a load inductor of344μH.A42.3μF capacitor bank(nine 4.7μF capacitors in parallel)is used to ensure a constant DC voltage(VDC)during the DUT switching process.The CVR(SSDN-414-01)is used to accurately measure the current(Id)of the DUT while a Tektronix voltage probe is used to obtain Vds signal during the switching transients.The current and voltage are displayed and stored using Tektronix Digital Oscilloscope(DOP 4104B-L)with 0.4 ns sampling interval.
本文编号：3360760
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/3360760.html
