Simulation study of InAlN/GaN high-electron mobility transis

发布时间：2021-10-08 03:51

　　In this work, we use a 3-nm-thick Al_0.64In_0.36N back-barrier layer in In_0.17Al_0.83 N/Ga N high-electron mobility transistor（HEMT） to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al_0.64In_0.36 N back-barrier on the direct-current（DC） and radio-frequency（RF） characteristics of In AlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of... 

【文章来源】：Chinese Physics B. 2017,26(10)EISCI

【文章页数】：5 页

【参考文献】：
期刊论文
[1]晶格匹配InAlN/GaN HEMT沟道温度评估方法研究[J]. 金宁,陈雷雷,曹艳荣,梁海莲,闫大为,顾晓峰.  微电子学. 2020(06)

硕士论文
[1]毫米波AlGaN/GaN/AlGaN双异质结HEMT研究[D]. 程志宏.西安电子科技大学 2020



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