Impact of low/high-κ spacer–source overlap on characteristic

发布时间：2021-10-13 10:38

　　The effects of low-κ and high-κ spacer were investigated on the novel tunnel dielectric based tunnel field-effect transistor（TD-FET） mainly based upon ultra-thin dielectric direct tunneling mechanism. Drive currents consist of direct tunneling current and band-to-band tunneling（BTBT） current. Meanwhile, tunneling position of the TD-FET differs from conventional tunnel-FET in which the electron and hole tunneling occur at intermediate rather than surface in channel（or source-channel junction unde... 

【文章来源】：Journal of Central South University. 2017,24(11)EISCICSCD

【文章页数】：10 页


本文编号：3434497