Ⅲ-Ⅴ族氮化物极性调控及在紫外LED中的应用

发布时间：2021-10-22 15:04

　　基于Ⅲ-Ⅴ族氮化物尤其是AlGaN三元化合物的紫外发光二极管（UV-LED）与传统紫外光源相比具有体积小、可靠性高、低成本和低能耗的优势,并且发光波长可在200-365 nm之间任意调节。然而UV-LED的外量子效率依然处于较低的水平,这主要的原因在于金属与AlGaN之间欧姆接触较差,以及光子提取效率较低。因为欧姆接触为载流子提供了单向的流通通道,因此对于LED来说,好的欧姆接触十分重要。为了解决这些问题,有必要设计并制备新的LED结构。研究中发现,横向极性结构（LPS）可以实现较好的欧姆接触。此外,通过合适的极性调控手段,我制备了无等离子体损伤的纳米柱结构,从而提升了 LED的光子提取效率。此论文主要分为四个部分。第一章主要讲述氮化物极性调控的研究背景。第二章主要讲述横向极性结构对于器件欧姆接触性能的影响。首先,通过在一个衬底上同时生长金属极性和氮极性材料,我制备了横向极性结构GaN和AlGaN。在此基础上,利用氮极性载流子浓度高,而金属极性电阻率高的特点,我制备了肖特基二极管（SBD）横向极性结构器件。通过在器件表面进行钝化处理,器件的反向漏电流减小了2个数量级,证明了钝化处理对于... 

【文章来源】：中国科学院大学(中国科学院宁波材料技术与工程研究所)浙江省

【文章页数】：73 页

【学位级别】：硕士

【文章目录】：
摘要
Abstract
1. Introduction
    1.1. Background and significance of the topic
    1.2. Metalorganic Chemical Vapor Deposition(MOCVD)
    1.3. Latest development and trends in optoelectronic and electronic device
        1.3.1. General review of optoelectronic and power electronics
            1.3.1.1. UV-A(340-400 nm)LEDs
            1.3.1.2. UV-B(290-340 nm)LEDs and UV-C(100-290 nm)LEDs
            1.3.1.3. Current Progress and limitations of Schottky barrier diodes
        1.3.2. Ohmic contact in electronic devices and optoelectronic devices
        1.3.3. Improvement of light extraction in LED devices
    1.4. Polarity control in Ⅲ-nitride and its applications
2. Polarity Control of GaN and Realization of GaN Schottky Barrier Diode Basedon Lateral-Polarity-Structure
    2.1. Overview
    2.2. Experiments and methods
    2.3. Results and discussions
        2.3.1. AFM and SEM of N-polar and Ga-polar surface
        2.3.2. Strain condition (Raman spectroscopy)
        2.3.3. Current-Voltage characteristic
    2.4. Summary
3. Design and fabrication of nanoscale LPS in light emission control of LEDdevices
    3.1. Overview
    3.2. Experiments and methods
        3.2.1. Design and fabrication of LPS
            3.2.1.1. Low temperature AIN buffer patterning using RIE etching
            3.2.1.2. Low temperature AIN buffer patterning by wet chemical etching
    3.3. Results and discussions
        3.3.1. SEM on surface morphology
        3.3.2. PL measurement 3373.4. Summary
    3.4. Summary
4. Metals network contact on p-GaN for LED light extraction
    4.1. Overview
    4.2. Experiments and methods
        4.2.1. Planer sample
    4.3. Results and discussions
        4.3.1. SEM on surface morphology
        4.3.2. I-V characteristic
    4.4. Summary
5. Concusion and possible future work
References
Acknowledgement
Author's resume and academic papers and research results published during the degree stud



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