具有86 mV/dec亚阈值摆幅的MoS 2 /SiO 2 场效应晶体管（英文）
发布时间：2022-01-11 04:49
在SiO2/Si(P++)衬底上制备了多层MoS2背栅器件并进行了测试.通过合理优化和采用10 nm SiO2栅氧,得到了良好的亚阈值摆幅86 mV/dec和约107倍的电流开关比.该器件具有较小的亚阈值摆幅和较小的回滞幅度,表明该器件具有较少的界面态/氧化物基团吸附物.由栅极漏电造成的漏极电流噪声淹没了该器件在小电流(10-13A)处的信号,限制了其开关比测量范围.基于本文以及前人工作中MoS2器件的表现,基于薄层SiO2栅氧的MoS2器件表现出了良好的性能和潜力,显示出丰富的应用前景.
【文章来源】：红外与毫米波学报. 2017,36(05)北大核心EISCICSCD
【文章页数】：7 页
【部分图文】：
背栅多层MoS场效应晶体管制备流程，(b)制备
红外与毫米波学报36卷Fig．3(a)Schematicofthetrapsourcesthatcausehysteresisintwo-directiongatesweeps．(b)Transfercharacteristicsofatwo-directionsweep图3(a)在双向扫描中引起回滞的缺陷态，(b)双向扫描的转移特性曲线chedmoleculesandtheinterfacetrapsactasanadjusta-blecapacitanceinserieswiththechannelregionandgatedielectric，thusbringingashifttothetransfercurves．Themagnitudeofvoltageshiftcorrespondstotheamountoftraps．AspresentedinFig．3(b)，thehysteresiswidthis0．13VatVDS=0．1V，andexpandsas0．17VatVDS=0．5V，wherethedeviceismeasuredinadarkcham-berat300K，andtherelativehumidityiscontrolledun-der30%［44］．Thesmallhysteresis［16，29，43，45］ofourde-viceindicatesamildinfluenceinducedbythetrap-formed‘capacitance’．Theexpandofthehysteresiswin-dowatVDS=0．5Vmightbejointlyinducedbytheresid-ualattachmentfromthe0．1Vtestandanenhancedab-sorptionofimpuritiesinthe0．5Vtestduetostrongere-lectroncurrentinMoS2．ToeliminatetheimpuritiesattachedtoMoS2mem-brane，onecansimplyapplyanegativevoltagestresstothedevice，whichwoulddecreasethe‘dopinglevel’inMoS2，thereforelesspolarmolecules(water)orelectro-philicmoleculeswillkeepstickinginthe2DMoS2lay-ers［43］．Adryeratmosphere［44］oravacuumtestingenvi-ronmentalsoworksindecreasingthehysteresis．Vacuumannealingwouldremovetheforeignmattermorethor-oughly［22］．However，aslongastheMoS2channelisex-posedtoambient，thedevice’sper
ndEOT．DuringawideDitrangefrom3×1011to8×1012cm-2·eV-1，atrendisobservedinFig．5(b)thattheSSvaluedecreaseswhenEOTbecomesthinner．Interestingly，noobviousevidenceisshownherethattheDitofMoS2/SiO2interfaceislargerthanthatofMoS2/high-κdielectricin-Fig．5(a)TransfercharacteristicsofBGML-MoS2deviceswithdifferentthicknessofSiO2insulator，(b)SSasafunctionofEOTwithdifferentdielectric，(c)ThemobilityofBGMoS2deviceswithdifferentdielectric图5(a)具有不同SiO2介质厚度的背栅多层MoS2器件的转移特性，(b)亚阈值斜率与不同电介质的等效氧化层厚度(EOT)的关系，(c)基于不同介质材料的背栅器件的迁移率terface．Ｒef.［54］concludesthatthedistributionofDitandthepeakofDitatnativeMoS2MOSinterfacesarenotstronglydependentonthegatedielectrics．Sincetheatta-chedimpuritieswillintroduceahysteresistotheBGde-vices，theDitcalculatedhereisprobablyasumofinter-facetrapsandchannelattachments．FurtherstudiesshouldbedevelopedtoresearchtheimpactonSSbroughtbyambientimpurities．Insummary，theSSofaSiO2-547
本文编号：3582123
【文章来源】：红外与毫米波学报. 2017,36(05)北大核心EISCICSCD
【文章页数】：7 页
【部分图文】：
背栅多层MoS场效应晶体管制备流程，(b)制备
红外与毫米波学报36卷Fig．3(a)Schematicofthetrapsourcesthatcausehysteresisintwo-directiongatesweeps．(b)Transfercharacteristicsofatwo-directionsweep图3(a)在双向扫描中引起回滞的缺陷态，(b)双向扫描的转移特性曲线chedmoleculesandtheinterfacetrapsactasanadjusta-blecapacitanceinserieswiththechannelregionandgatedielectric，thusbringingashifttothetransfercurves．Themagnitudeofvoltageshiftcorrespondstotheamountoftraps．AspresentedinFig．3(b)，thehysteresiswidthis0．13VatVDS=0．1V，andexpandsas0．17VatVDS=0．5V，wherethedeviceismeasuredinadarkcham-berat300K，andtherelativehumidityiscontrolledun-der30%［44］．Thesmallhysteresis［16，29，43，45］ofourde-viceindicatesamildinfluenceinducedbythetrap-formed‘capacitance’．Theexpandofthehysteresiswin-dowatVDS=0．5Vmightbejointlyinducedbytheresid-ualattachmentfromthe0．1Vtestandanenhancedab-sorptionofimpuritiesinthe0．5Vtestduetostrongere-lectroncurrentinMoS2．ToeliminatetheimpuritiesattachedtoMoS2mem-brane，onecansimplyapplyanegativevoltagestresstothedevice，whichwoulddecreasethe‘dopinglevel’inMoS2，thereforelesspolarmolecules(water)orelectro-philicmoleculeswillkeepstickinginthe2DMoS2lay-ers［43］．Adryeratmosphere［44］oravacuumtestingenvi-ronmentalsoworksindecreasingthehysteresis．Vacuumannealingwouldremovetheforeignmattermorethor-oughly［22］．However，aslongastheMoS2channelisex-posedtoambient，thedevice’sper
ndEOT．DuringawideDitrangefrom3×1011to8×1012cm-2·eV-1，atrendisobservedinFig．5(b)thattheSSvaluedecreaseswhenEOTbecomesthinner．Interestingly，noobviousevidenceisshownherethattheDitofMoS2/SiO2interfaceislargerthanthatofMoS2/high-κdielectricin-Fig．5(a)TransfercharacteristicsofBGML-MoS2deviceswithdifferentthicknessofSiO2insulator，(b)SSasafunctionofEOTwithdifferentdielectric，(c)ThemobilityofBGMoS2deviceswithdifferentdielectric图5(a)具有不同SiO2介质厚度的背栅多层MoS2器件的转移特性，(b)亚阈值斜率与不同电介质的等效氧化层厚度(EOT)的关系，(c)基于不同介质材料的背栅器件的迁移率terface．Ｒef.［54］concludesthatthedistributionofDitandthepeakofDitatnativeMoS2MOSinterfacesarenotstronglydependentonthegatedielectrics．Sincetheatta-chedimpuritieswillintroduceahysteresistotheBGde-vices，theDitcalculatedhereisprobablyasumofinter-facetrapsandchannelattachments．FurtherstudiesshouldbedevelopedtoresearchtheimpactonSSbroughtbyambientimpurities．Insummary，theSSofaSiO2-547
本文编号：3582123
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/3582123.html
