Intrinsic relationship between photoluminescence and electri

发布时间：2022-01-19 20:08

　　The photoluminescence（PL） and electrical properties of Al GaN/GaN high electron mobility transistors（HEMTs） with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations,the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an Fe_Ga^3+/2+ acceptor level. This results in a decrease in the yellow luminescence（YL） em... 

【文章来源】：Chinese Physics B. 2017,26(09)EISCI

【文章页数】：5 页

【文章目录】：
1. Introduction
2. Experiment
3. Results and discussion
4. Conclusion



本文编号：3597482