A novel enhancement mode AlGaN/GaN high electron mobility tr
发布时间：2023-04-10 01:52
A novel enhancement-mode AlGaN/GaN high electron mobility transistor(HEMT) is proposed and studied.Specifically,several split floating gates(FGs) with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the Vth decreases with the increase of polarization sheet charge density and the tunnel dielectric(between FGs and AlGaN) thickness,while it increases with the increase of FGs sheet charge density and blocking dielectric(between FGs and ...
【文章页数】：5 页
本文编号：3788113
【文章页数】：5 页
本文编号：3788113
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