X射线衍射法测量蓝宝石单晶残余应力的研究

发布时间：2018-01-05 21:41

  本文关键词：X射线衍射法测量蓝宝石单晶残余应力的研究　出处：《哈尔滨工业大学》2016年硕士论文　论文类型：学位论文

  更多相关文章： 蓝宝石单晶 残余应力 X射线衍射 多重线性回归方法

【摘要】：蓝宝石单晶具有特殊的晶体结构,决定其具备优异的力学、光学和化学等性能,广泛应用在军事和民用领域。但在蓝宝石单晶的生长、加工和使用过程中,产生的残余应力会引入微裂纹、位错等缺陷,制约了其使用性能。特别是作为光学窗口材料,在振动环境下,使材料发生低应力脆性断裂,导致灾难性的后果。因此,开展蓝宝石单晶残余应力的研究,具有十分重要的意义。目前,X射线衍射法是测量单晶材料残余应力的主要方法,具有无损、快捷、高精度等优点。本文选择用L-XRD应力衍射仪测量的极图计算蓝宝石单晶的残余应力。探究和分析多重线性回归方法测量蓝宝石单晶残余应力的理论过程；通过测量单晶铁和单晶硅的残余应力,验证多重线性回归方法的正确性；通过误差、方差分析晶面组数以及晶面族对测量结果的影响；用多重线性回归法计算蓝宝石单晶的残余应力。实验结果表明：多重线性回归方法不需要知道材料无应力下的点阵常数d0和布拉格衍射角2θ_0的精确值,避免d_0和2θ_0的不精确性带来的误差,提高该方法的精确性；L-XRD应力衍射仪测量单晶铁和单晶硅的残余应力数据与多重线性回归方法计算数据在误差范围内相符,原理推导正确；多重线性回归方法测定单晶残余应力至少需要4个晶面组数,当晶面组数大于等于6时,计算结果趋于稳定。多重线性回归方法计算蓝宝石单晶的残余应力,{330}晶面族计算结果为σ_(11),=-241.7766MPa,σ_(12)=-1487.6718MPa,σ_(22)=-3394.2589MPa；{4010}计算结果为σ_(11)=-253.0348MPa,σ_(12)=-1439.0512MPa,σ_(22)=-3330.1074MPa,2θ_0=143.0012°。
[Abstract]:The sapphire crystal has special crystal structure, the excellent mechanical, optical and chemical properties, are widely used in military and civil fields. But in the sapphire crystal growth, processing and use of the process, the residual stress will introduce micro cracks, defects such as dislocations, restricting its use especially performance. As the optical window materials in vibration environment, makes the material of low stress brittle fracture, lead to disastrous consequences. Therefore, to carry out the research of sapphire crystal and residual stress, has very important significance. At present, X ray diffraction method is the main method for measuring residual stress of single crystal material is nondestructive, fast. High precision. The residual calculation of sapphire crystal with L-XRD pole figure force diffraction measurements of the stress in this paper. Research and analysis of multiple linear regression method to measure the residual stress of the sapphire crystal theory Cheng; through measuring the residual stress of single crystal iron and silicon, verify the correctness of multiple linear regression method; the error analysis of variance effect of crystal surface and crystal plane group group number on the measurement results; the residual regression method to calculate the sapphire crystal with multiple linear stress. The experimental results show that the lattice constant of multiple linear d0 the regression method does not need to know the material stress and Prague diffraction angle 2 theta _0 the exact value of d_0 and avoid errors due to imprecise 2 0 _0, to improve the accuracy of the proposed method; L-XRD residual force diffraction measurements on single crystal silicon and iron stress data and multiple linear regression method the data are in the range of error, the principle is correct; Determination of stress requires at least 4 sets of single crystal crystal surface residual multiple linear regression method, when the plane number is greater than or equal to 6, the results of multiple lines tend to be stable. The residual calculation of single crystal sapphire regression method of the stress calculation results, {330} family of sigma _ (11), =-241.7766MPa (12) =-1487.6718MPa _, sigma sigma, _ (22) =-3394.2589MPa; {4010} results of sigma _ (11) =-253.0348MPa (12) =-1439.0512MPa _, sigma sigma, _ (22) =-3330.1074MPa 2, theta _0=143.0012 degrees.

【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：O733
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本文编号：1384956