Mn:Fe:KTN晶体光折变效应及其铁电畴研究

发布时间：2018-05-22 08:15

本文选题：光折变效应 + Bragg光栅　；参考：《天津大学》2016年硕士论文

【摘要】：钽铌酸钾(KTN)晶体因其二次电光系数大、衍射效率高、电场响应速度快等优点,在电控全息光开关、光存储、光偏转及光聚焦等领域具有广泛的应用价值。本文对双掺杂锰铁钽铌酸钾(Mn:Fe:KTN)晶体的光折变效应及其铁电畴现象进行了研究,所做的主要工作如下:(1)对单中心带输运模型和双中心带输运模型进行了理论研究,分析了在不同电压、写入光强、温度及曝光时间下,单光束及双光束照射时,Mn:KLTN晶体和Mn:Fe:KTN晶体电控光致折射率变化规律。基于数字全息干涉技术,可视化Mn:KLTN晶体和Mn:Fe:KTN晶体在片状单光束照射及在不同写入条件下的电控光致折射率变化,实验结果与理论分析吻合。(2)基于显微全息干涉技术,原位可视化电控全息Bragg光栅的写入与擦除过程,给出了在不同写入电压、再现电压、环境温度、退火速率及曝光时间下,光诱导折射率变化规律,以及衍射效率,并与理论结果进行了比对。该研究成果为电控全息光开关的制作提供了最佳的写入参数。(3)基于全息干涉法在Mn:Fe:KTN晶体内写入光子晶格,利用显微全息干涉技术原位可视化晶格结构,并进行了理论分析。(4)利用偏振光成像法观察晶体的铁电畴,分析了畴壁取向、畴的热电效应、畴的自恢复、电畴反转、畴的极化现象。给出了不同偏振光、外加电压、环境温度、退火速率下,畴的透射光场变化,并进行了初步分析。该研究成果为畴的生长及控制提供了理论指导。
[Abstract]:Potassium tantalum (KTN) crystal has a wide application value in the fields of electronic controlled holographic optical switch, optical storage, light deflection and light focusing because of its high secondary electro-optical coefficient, high diffraction efficiency and fast electric field response. This paper studies the photorefractive effect and ferroelectric domain phenomenon of double doped ferromanganese tantalum and niobate (Mn:Fe:KTN) crystal. The main work is as follows: (1) a theoretical study of the single center band transport model and the dual center transport model is carried out. The change law of the electronic control refractive index of Mn:KLTN crystal and Mn:Fe:KTN crystal is analyzed at different voltage, writing intensity, temperature and exposure time, single beam and double beam irradiation, based on digital holographic interferometry, The experimental results are consistent with the theoretical analysis of the visual refractive index changes of the visual Mn:KLTN crystal and Mn:Fe:KTN crystal under single beam irradiation and different writing conditions. (2) based on the holographic interferometry, the writing and erasing of the in situ visual electronic holographic Bragg grating are presented, and the different writing voltages and the reproduced voltages are given. Environmental temperature, annealing rate and exposure time, light induced refractive index change law and diffraction efficiency are compared with the theoretical results. The research results provide the best writing parameters for the manufacture of electronic controlled holographic optical switch. (3) holographic interferometry is used to write photon lattice in Mn:Fe:KTN crystal, and the holographic interferometry technique is used. The lattice structure was visualized in situ, and the theoretical analysis was carried out. (4) the ferroelectric domain of the crystal was observed by polarized light imaging. The domain wall orientation, the thermoelectric effect of domain, the self recovery of domain, the domain reversal, the polarization of domain were analyzed. The transmission light fields of different polarized light, applied voltage, ambient temperature and annealing rate were given and carried out. The preliminary analysis provides theoretical guidance for domain growth and control.
【学位授予单位】：天津大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：O734

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