单晶六方SiC和多晶化学气相沉积SiC的常温辐照肿胀差异性

发布时间：2018-06-12 15:36

  本文选题：碳化硅 + 晶界　； 参考：《物理学报》2017年06期

【摘要】：SiC具有耐辐射、低感生放射性、耐高温等特点,在先进核能系统中具有重要的应用.用1.5 MeV的Si离子在常温下注入单晶六方SiC和多晶化学气相沉积SiC,注量分别为1×10~(14)—2×10~(16)cm~(-2)和1×10~(15)—2×10~(16)cm~(-2),利用X射线衍射(XRD)仪和白光干涉仪测量材料的晶格常数和辐照肿胀随着注量增大的变化规律.结果显示:在1.5 MeV Si离子常温辐照下,注量达到2×10~(15)cm~(-2)时,单晶六方SiC完全非晶化;注量在1×10~(15)—5×10~(15)cm~(-2),单晶六方SiC的辐照肿胀明显高于多晶化学气相沉积SiC的辐照肿胀;注量达到1×10~(16)cm~(-2)时,单晶六方SiC和多晶化学气相沉积SiC的辐照肿胀达到饱和并趋于一致,肿胀结果表明常温辐照环境下多晶化学气相沉积SiC的非晶化阈值剂量大于单晶六方SiC.通过分析单晶六方SiC和多晶化学气相沉积SiC常温辐照肿胀差异的原因,研究了晶界对SiC材料非晶化肿胀规律的影响,并对XRD辐照肿胀测量方法的适用范围进行了讨论.
[Abstract]:SiC has the characteristics of radiation resistance, low induced radioactivity, high temperature resistance and so on. It has important applications in advanced nuclear energy systems. Using 1.5 MeV Si ions, single crystal six square SiC and polycrystalline chemical vapor deposition SiC are injected at normal temperature. The injection amount is 1 * 10~ (14) - 2 * 10~ (16) cm~ (-2) and 1 * 10~ (15) 2 x 10~ (16) cm~. The white light interferometer measured the lattice constant of the material and the variation of the irradiation swelling with the increase of injection. The results showed that when the injection amount reached 2 x 10~ (15) cm~ (-2) at 1.5 MeV Si ion temperature, the single crystal six square SiC was completely non crystallized; the injection amount was 1 * 10~ (15) - 5 * 10~ (15) cm~ (-2), and the irradiated swelling of the single crystal six party SiC was obviously higher than that of polycrystalline chemistry When the vapor deposition of SiC is irradiated and the injection amount reaches 1 * 10~ (16) cm~ (-2), the radiation swelling of the single crystal six square SiC and polycrystalline chemical vapor deposition SiC is saturated and tends to be consistent. The swelling results show that the amorphous threshold value of the polycrystalline chemical vapor deposition of SiC under ambient temperature irradiation is greater than that of the single crystal six square SiC. by analyzing the SiC and the more of the six square crystals of the single crystal. The reason of the difference in the swelling of crystal chemical vapor deposition (SiC) at normal temperature was studied. The effect of grain boundary on the non crystalline swelling of SiC materials was studied, and the scope of application of the measurement method of XRD irradiation swelling was discussed.
【作者单位】： 西安交通大学核科学与技术学院;
【基金】：国家自然科学基金(批准号:11405124) 国家教育部博士点专项基金(批准号:20130201120065) 陕西省自然科学基础研究计划(批准号:2015JQ1030)资助的课题~~
【分类号】：O613.72;O74

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