介电层表面直接生长石墨烯的研究进展

发布时间：2018-06-15 13:28

本文选题：石墨烯 + 介电层　；参考：《物理学报》2017年21期

【摘要】：作为21世纪备受瞩目的材料,石墨烯兼具优异的电、热、光与力学性质,具有十分广阔的研究价值与应用价值.目前主要通过在金属基底上生长获得石墨烯,并将其转移至目标介电层基底上以构筑电子器件.转移过程不可避免地引入了褶皱、裂纹、破损以及聚合物/金属残留,严重损害了石墨烯的性能.因而直接在介电基底上制备高质量的石墨烯薄膜具有重要意义.本文总结了近年来在介电衬底上直接生长石墨烯的研究进展:阐述了金属辅助法、等离子体增强法以及热力学或动力学调控法等多种生长手段;介绍了多种介电/绝缘基底包括SiO_2/Si,Al_2O_3,SrTiO_3,h-BN,SiC,Si_3N_4以及玻璃表面生长石墨烯的特点与性能,分析了其可能的生长机理.根据拉曼谱图、薄层电阻、透光率、载流子迁移率等评估指标,将多种方法得到的石墨烯质量进行了总结与比较,并提出了直接在介电衬底上生成石墨烯的研究难点与趋势.
[Abstract]:As one of the most attractive materials in the 21 ~ (st) century, graphene has excellent electrical, thermal, optical and mechanical properties. At present, graphene is obtained by growth on metal substrate and transferred to the target dielectric substrate to construct electronic devices. The transfer process inevitably introduces folds, cracks, breakage and polymer / metal residues, which seriously impair the properties of graphene. Therefore, it is of great significance to prepare high quality graphene films directly on dielectric substrates. In this paper, the recent progress in the direct growth of graphene on dielectric substrates is summarized. The methods of metal assisted growth, plasma enhancement and thermodynamics or kinetic regulation are reviewed. The characteristics and properties of various dielectric / insulating substrates including Sio _ 2 / SiS _ 2O _ 3S _ 2O _ 3S _ TiO _ 3h-BN _ N _ Si _ C _ (C) Si _ 3N _ 4 and the growth of graphene on glass surface are introduced. The possible growth mechanism of graphene is analyzed. According to the evaluation indexes of Raman spectrum, thin layer resistance, transmittance and carrier mobility, the quality of graphene obtained by various methods was summarized and compared, and the research difficulties and trends of graphene formation on dielectric substrates were put forward.
【作者单位】：哈尔滨工业大学材料科学与工程学院;哈尔滨工业大学微系统与微结构制造教育部重点实验室;
【基金】：国家重点基础研究发展计划(批准号:2013CB632900) 国家自然科学基金(批准号:61390502,21373068)资助的课题~~
【分类号】：O613.71

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