SiC衬底上近自由态石墨烯制备及表征的研究进展
发布时间：2018-10-10 15:36
【摘要】：石墨烯材料自问世以来,一直处于学界研究的焦点,在微电子器件领域,通过Si C衬底制备的近自由态石墨烯具有较大的应用潜力。本文介绍了Si C热解法制备石墨烯的优势与劣势,说明了近自由态石墨烯制备的原因。综合阐述了目前制备近自由态石墨烯的常用方法,并对比了各种制备方法的特点。最后,概述了近自由态石墨烯的常用表征手段。
[Abstract]:Graphene materials have always been the focus of academic research since they came out. In the field of microelectronic devices, the near-free graphene prepared by Si C substrate has great application potential. This paper introduces the advantages and disadvantages of preparing graphene by Si C pyrolysis, and explains the reasons for the preparation of graphene in near free state. The common methods of preparing near free graphene are reviewed, and the characteristics of various preparation methods are compared. Finally, the common characterization methods of near free graphene are summarized.
【作者单位】： 山东大学晶体材料国家重点实验室;
【基金】：山东大学基本科研业务费资助项目自然科学专项(2014QY005)
【分类号】：O613.71
[Abstract]:Graphene materials have always been the focus of academic research since they came out. In the field of microelectronic devices, the near-free graphene prepared by Si C substrate has great application potential. This paper introduces the advantages and disadvantages of preparing graphene by Si C pyrolysis, and explains the reasons for the preparation of graphene in near free state. The common methods of preparing near free graphene are reviewed, and the characteristics of various preparation methods are compared. Finally, the common characterization methods of near free graphene are summarized.
【作者单位】： 山东大学晶体材料国家重点实验室;
【基金】：山东大学基本科研业务费资助项目自然科学专项(2014QY005)
【分类号】：O613.71
【共引文献】
相关期刊论文 前1条
1 李松荣;王爱国;王龙;杨其;向章;曾琼;曹q暑，
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