碘化铯晶体的抛光研究

发布时间：2019-03-26 10:46

【摘要】：早在20世纪80年代,人们就发现了CsI(Tl)晶体在光学领域应用的优点。随着CsI(TI)应用领域的不断拓展,如何获得优良的表面质量以满足应用的需要就显得十分重要。但是由于CsI(TI)具有质软、易水解、对温度和光变化敏感等特点,这些特点对加工造成了一定的难度。传统的加工方法是采用含有磨料的抛光液对材料表面进行超精密加工。虽然传统加工方式因为有磨料存在的关系而能够产生较大的材料去除率。但是固体磨料普遍分散性差而且易于发生黏结,会在表面产生划痕和凹坑,使被加工表面的抛光质量被恶化,降低材料的使用性能。因此在改进原有CsI(TI)晶体超精密加工方法的同时,也需要努力探索新的CsI(TI)晶体超精密加工技术,以满足实际应用的需要。本文提出一种利用水解作用对CsI(TI)晶体进行超精密加工的新技术,即CsI(TI)晶体水解抛光技术。首先综述了CsI(TI)晶体的传统加工技术和化学机械抛光的发展现状,在此基础之上,根据CsI(TI)晶体的易水解性质,并借鉴化学机械抛光(CMP)中材料的去除机制,提出了CsI(TI)晶体水解抛光的新技术。然后,对水解抛光的抛光液成分和配比进行了研究,得到了适合本加工技术的抛光液配方。通过CsI(TI)晶体水解抛光实验,对抛光液水解作用的控制进行了验证,并检验了所研制抛光液的使用性能。同时研究了抛光时间、抛光盘转数和抛光压强等变量参数对CsI(TI)晶体水解抛光的材料去除率和表面粗糙度的影响,得到了较优的工艺参数组合。最后,对CsI(TI)晶体进行了传统的无水解抛光实验,选取了CeO2和SiO2两种磨粒分别对CsI(TI)晶体进行单因素实验,研究了不同磨粒固含量、抛光盘转数和抛光压强等输入变量对CsI(TI)晶体无水解抛光的材料去除率和表面粗糙度的影响,得到了较优的工艺参数组合,并对无水解抛光和水解抛光后的表面形貌进行了对比分析。证明了水解抛光的优越性。
[Abstract]:In the early 1980s, the advantages of CsI (Tl) crystals were found in the optical field. With the development of the application field of CsI (TI), it is very important to get good surface quality to meet the needs of the application. However, CsI (TI) has the characteristics of soft, easy to hydrolyze, sensitive to temperature and light. The traditional processing method comprises the following steps of: carrying out ultra-precision processing on the surface of the material by using the polishing solution containing the abrasive. While the conventional processing method is capable of producing a large material removal rate due to the relationship of the abrasive present. But the solid abrasive is generally poor in dispersibility and is easy to adhere, and scratches and pits are generated on the surface, so that the polishing quality of the processed surface is deteriorated, and the service performance of the material is reduced. In order to meet the needs of practical application, the new CsI (TI) crystal superprecision machining technology is also needed to improve the ultra-precision machining method of the original CsI (TI) crystal. In this paper, a new technique for ultra-precision machining of CsI (TI) crystals by hydrolysis is proposed, that is, CsI (TI) crystal hydrolysis and polishing technology. In this paper, the traditional processing technology of CsI (TI) crystal and the development of chemical mechanical polishing are reviewed. On this basis, the new technology of CsI (TI) crystal hydrolysis and polishing is put forward based on the easy hydrolysis of CsI (TI) crystal and the removal mechanism of the material in chemical mechanical polishing (CMP). Then, the composition and the proportion of the polishing solution to be hydrolyzed and polished are researched, and a polishing solution formula suitable for the processing technology is obtained. The control of the hydrolysis of the polishing solution was verified by the crystal hydrolysis and polishing experiment of CsI (TI), and the service performance of the polishing solution was tested. The effects of the parameters such as the polishing time, the number of revolutions of the polishing disk and the polishing pressure on the removal rate and the surface roughness of the CsI (TI) crystal are studied. The optimum combination of process parameters is obtained. In the end, the conventional hydrolysis-free polishing experiment was carried out on the CsI (TI) crystal, and the single-factor experiment was carried out on the CsI (TI) crystal by using the two kinds of abrasive grains of CeO2 and SiO2 respectively, and the solid content of different abrasive grains was studied. The effects of the input variables such as the number of revolutions of the polishing disk and the polishing pressure on the removal rate and the surface roughness of the CsI (TI) crystal without the hydrolysis and polishing are affected, and a better combination of the process parameters is obtained, and the surface morphology after the no-hydrolysis polishing and the hydrolysis and polishing is compared and analyzed. And the advantages of the hydrolysis and polishing are proved.
【学位授予单位】：沈阳理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O786

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