激光线宽对单次通过PPMgO:LN晶体倍频效率的影响
[Abstract]:Through a single pass through the PPMgO:LN crystal, a 2.06 W tunable continuous frequency doubling light of 780 nm has been produced. A 1560 nm distributed feedback (DFB) semiconductor laser, a grating external cavity semiconductor laser (ECDL) and a distributed feedback erbium-doped fiber laser (DFB-EDFL) are used as injection light sources for the erbium-doped fiber amplifier (EDFA), respectively. The EDFA used has the function of maintaining narrow linewidth, so it can be ignored to widen the fundamental linewidth. The effect of laser linewidth on the frequency doubling efficiency of single pass PPMg O:LN crystal is studied. Each of the three lasers is controlled to inject the same power into the EDFA while maintaining the output power of the EDFA. When the fundamental power is 12.42 W, the DFB semiconductor laser is injected into EDFA and the output power is 1.36 W, and the conversion efficiency is 11.0%. When ECDL was used as seed source, the conversion efficiency was 14.3% and the conversion efficiency was 14.3%, and the conversion efficiency was 16.6% when DFB-EDFL was used as seed source, and the output was 2.06 W, and the conversion efficiency was 16.6% when the seed source was used as seed source, and the conversion efficiency was 14.3% when the seed source was used as seed source. The linewidths of the three seed lasers are 1.2 MHz (DFB), 200 k Hz (ECDL) and 600 Hz (DFB-EDFL), respectively. The narrower the linewidth is, the higher the frequency doubling efficiency is, and the experimental results agree with the theoretical analysis.
【作者单位】: 量子光学与光量子器件国家重点实验室(山西大学)山西大学光电研究所;
【基金】:国家自然科学基金(批准号:61475091,11274213,61205215,61227902) 国家重大科学研究计划(批准号:2012CB921601)资助的课题~~
【分类号】:O734
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