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碳化硼研磨后蓝宝石晶体的亚表面损伤

发布时间:2019-05-24 14:54
【摘要】:介绍了蓝宝石材料的亚表面损伤形成机制。考虑碳化硼磨料可产生较小亚表面损伤的优点,本文基于游离磨料研磨方式,研究了不同粒度碳化硼磨料研磨后蓝宝石晶体的亚表面损伤。利用KOH化学腐蚀处理技术,对研磨后的样品进行了刻蚀;通过特定的腐蚀坑图像间接反映了蓝宝石晶体的亚表面损伤形貌特征,获得了W20、W10和W5碳化硼磨料产生的亚表面损伤深度,得到了在不同刻蚀时间下蓝宝石亚表面损伤形貌、表面粗糙度和刻蚀速率。研究结果显示:游离碳化硼磨料研磨造成的蓝宝石晶体的亚表面损伤密度相当显著,但损伤深度并不大,其随磨料粒度的增大而增大,W20、W10和W5粒度的磨料研磨后产生的亚表面损伤深度分别为7.4,4.1和2.9μm,约为磨料粒度的1/2。得到的结果表明采用碳化硼磨料研磨有利于获得低亚表面损伤的蓝宝石晶片,而采用由大到小的磨料逐次研磨可以快速获得低亚表面损伤的蓝宝石晶片。
[Abstract]:The subsurface damage formation mechanism of sapphire materials is introduced. Considering the advantage that boron carbide abrasive can produce small subsurface damage, the subsurface damage of sapphire crystal after boron carbide abrasive grinding with different particle sizes has been studied based on free abrasive grinding method. The samples after grinding were etched by KOH chemical corrosion treatment technology. The subsurface damage morphology of sapphire crystal is indirectly reflected by specific corrosion pit images. The subsurface damage depth produced by W20, W10 and W5 boron carbide abrasives is obtained, and the subsurface damage morphology of sapphire under different etch time is obtained. Surface roughness and etch rate. The results show that the subsurface damage density of sapphire crystal caused by free boron carbide abrasive grinding is quite significant, but the damage depth is not large, which increases with the increase of abrasive particle size. The subsurface damage depth of W10 and W5 particle size abrasive grinding is 7.4, 4.1 渭 m and 2.9 渭 m, respectively, which is about 1 鈮,

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