基于斜光刻技术的SU-8胶三维微阵列结构制备
发布时间：2019-05-28 13:03
【摘要】：利用斜光刻技术替代传统的直光刻技术在相同底面积的基础上增大微阵列比表面积制备了高比表面积三维微阵列结构,。首先,利用MATLAB仿真对微阵列排布方式进行分析,确定最佳单个柱体宽度及阵列间距。实验中,采用两次甩胶法将SU-8光刻胶均匀旋涂在2寸硅基底上,甩胶转速设为1500 r/min,旋涂时间设为35 s;分别置于65℃烘台上保持20 min和95℃烘台上保持70 min进行两次前烘处理;随后进行双向斜曝光,微柱宽度为20μm,阵列间距为30μm,光刻角度为20°。最后,再通过高低温后烘处理并显影30 min成功制备出了结构稳定的"X"型三维微阵列结构。
[Abstract]:The 3D microarray structure with high specific surface area was prepared by using oblique lithography instead of traditional direct lithography on the basis of increasing the specific surface area of microarray on the basis of the same bottom area. Firstly, the microarray arrangement is analyzed by MATLAB simulation, and the optimum single cylinder width and array spacing are determined. In the experiment, SU-8 photoresist was evenly coated on 2 inch silicon substrate by two times of gel rejection method, the rotating speed of the adhesive was set to 1500 r 路min, and the spinning time was set to 35 s. The drying table was kept at 65 鈩，
本文编号：2487086
[Abstract]:The 3D microarray structure with high specific surface area was prepared by using oblique lithography instead of traditional direct lithography on the basis of increasing the specific surface area of microarray on the basis of the same bottom area. Firstly, the microarray arrangement is analyzed by MATLAB simulation, and the optimum single cylinder width and array spacing are determined. In the experiment, SU-8 photoresist was evenly coated on 2 inch silicon substrate by two times of gel rejection method, the rotating speed of the adhesive was set to 1500 r 路min, and the spinning time was set to 35 s. The drying table was kept at 65 鈩，
本文编号：2487086
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