半导体电极的平带电位

发布时间：2019-06-11 04:05

【摘要】：平带电位(E_(fb))是半导体/电解质溶液体系的重要概念,是半导体电极在平带状态时的电极电位,它是半导体电极特有的可以实验测定的物理量。利用Mott-Schottky曲线以及光电化学等方法可以测定平带电位,判断半导体的类型以及估算半导体的载流子浓度,其数值可用于推测半导体的能级结构,确定半导体材料的价带或导带能级位置。这对于与太阳能开发利用相关的半导体光催化和光电化学研究都是非常重要的。本文分析了半导体电极的能带弯曲及影响因素,首次提出半导体界面层内费米能级弯曲,阐明半导体电极平带电位的物理意义及其测定方法,以帮助初学者理解和应用平带电位。
[Abstract]:Flat band potential (E _ (fb) is an important concept of semiconductor / electrolyte solution system. It is the electrode potential of semiconductor electrode in flat band state. It is a unique physical quantity of semiconductor electrode which can be measured by experiment. The flat band potential can be measured by Mott-Schottky curve and photochemistry, the type of semiconductor can be judged and the carrier concentration of semiconductor can be estimated. The numerical value can be used to speculate the energy level structure of semiconductor. The valence band or conduction band energy level position of semiconductor material is determined. This is very important for semiconductor photocatalysis and photochemistry related to solar energy development and utilization. In this paper, the energy band bending of semiconductor electrode and its influencing factors are analyzed, and the Fermi energy level bending in semiconductor interface layer is put forward for the first time. The physical meaning and determination method of flat band potential of semiconductor electrode are expounded. To help beginners understand and apply flat band potentials.
【作者单位】：复旦大学材料科学系;
【基金】：国家自然科学基金项目(21273047) 复旦大学教学改革重点项目(2017ZD018)资助
【分类号】：O646

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