Resistive Switching Behavior of Ag/Mg 0.2 Zn 0.8 O/ZnMn 2 O

发布时间：2024-01-19 15:26

　　The Ag/Mg_0.2Zn_0.8O/ZnMn₂O₄/p⁺-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_HRS/R_LRS of high resistance state and low resistance state is as large a...

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