基于介质阻挡放电的复合阳极键合机理和工艺设备研究
发布时间：2018-11-26 08:03
【摘要】：阳极键合经过多年的发展，目前已经被广泛应用于微机电系统(MEMS)，，已成为重要的MEMS封装技术之一。MEMS技术将微机械技术及微电子技术相结合，是一种新兴技术，可以制造出微机电系统。阳极键合技术不仅被大量应用于微机械，微传感器，微型仪表制造等MEMS领域，而且在电真空，航空航天，太阳能电池制造等领域中也有较高的应用价值。当今MEMS和其他各领域的快速发展，也给阳极键合技术提出了新的要求，目前阳极键合的研究方向主要集中在低温阳极键合，和异质材料阳极键合方面。 本文针对阳极键合技术中键合质量和键合温度的矛盾，以实现低温阳极键合为目标，提出了基于介质阻挡放电的复合阳极键合方法，可实现低温阳极键合。 研究了基于介质阻挡放电的复合阳极键合机理，分析了复合阳极键合的工艺条件，搭建了复合阳极键合实验平台，进行了介质阻挡放电实验，使介质阻挡放电在大气压下呈现出了辉光放电的形式，证明了利用介质阻挡放电实现低温阳极键合是可行的。 通过实验，分析了各工艺参数，主要影响参数有：放电电压、频率、放电间隙、键合温度、键合电压。其中键合温度仍然是最主要影响因素。
[Abstract]:After years of development, anode bonding has been widely used in MEMS (MEMS), which has become one of the important MEMS packaging technologies. MEMS technology is a new technology, which combines micromechanical technology with microelectronics technology. Micro-electromechanical systems can be made. The anodic bonding technology is not only widely used in the fields of MEMS, such as micro-machinery, micro-sensor, micro-instrument manufacture, but also has high application value in the fields of electric vacuum, aerospace, solar cell manufacture and so on. With the rapid development of MEMS and other fields, new requirements have been put forward for anodic bonding technology. At present, the research direction of anodic bonding is mainly focused on low temperature anodic bonding and anodic bonding of heterogeneous materials. Aiming at the contradiction between the bonding quality and the bonding temperature in the anodic bonding technology, a composite anodic bonding method based on dielectric barrier discharge (DBD) is proposed in this paper, which can realize the low temperature anodic bonding. The mechanism of composite anode bonding based on dielectric barrier discharge (DBD) is studied, the process conditions of composite anode bonding are analyzed, the experimental platform of composite anode bonding is built, and the dielectric barrier discharge experiment is carried out. The dielectric barrier discharge presents the form of glow discharge at atmospheric pressure, which proves that it is feasible to use dielectric barrier discharge to realize low temperature anodic bonding. The main parameters are as follows: discharge voltage, frequency, discharge gap, bonding temperature and bonding voltage. The bonding temperature is still the most important factor.
【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TH-39
本文编号：2357887
[Abstract]:After years of development, anode bonding has been widely used in MEMS (MEMS), which has become one of the important MEMS packaging technologies. MEMS technology is a new technology, which combines micromechanical technology with microelectronics technology. Micro-electromechanical systems can be made. The anodic bonding technology is not only widely used in the fields of MEMS, such as micro-machinery, micro-sensor, micro-instrument manufacture, but also has high application value in the fields of electric vacuum, aerospace, solar cell manufacture and so on. With the rapid development of MEMS and other fields, new requirements have been put forward for anodic bonding technology. At present, the research direction of anodic bonding is mainly focused on low temperature anodic bonding and anodic bonding of heterogeneous materials. Aiming at the contradiction between the bonding quality and the bonding temperature in the anodic bonding technology, a composite anodic bonding method based on dielectric barrier discharge (DBD) is proposed in this paper, which can realize the low temperature anodic bonding. The mechanism of composite anode bonding based on dielectric barrier discharge (DBD) is studied, the process conditions of composite anode bonding are analyzed, the experimental platform of composite anode bonding is built, and the dielectric barrier discharge experiment is carried out. The dielectric barrier discharge presents the form of glow discharge at atmospheric pressure, which proves that it is feasible to use dielectric barrier discharge to realize low temperature anodic bonding. The main parameters are as follows: discharge voltage, frequency, discharge gap, bonding temperature and bonding voltage. The bonding temperature is still the most important factor.
【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TH-39
【参考文献】
相关期刊论文 前7条
1 李仁锋;;微电子机械系统键合强度检测方法研究进展[J];微纳电子技术;2009年11期
2 陈立国,孙立宁,黄庆安,陈涛;硅片键合强度测试系统研究[J];测试技术学报;2005年02期
3 刘勇;李清泉;;电流体动力等离子体发生器特性实验研究[J];电工电能新技术;2009年02期
4 祁雪;黄庆安;秦明;张会珍;樊路加;;单片集成MEMS中的阳极键合工艺[J];电子器件;2005年04期
5 庄洪春,孙鹞鸿,彭燕昌,张维,严萍;介质阻挡放电产生等离子体技术研究[J];高电压技术;2002年S1期
6 姜慧;邵涛;于洋;章程;牛铮;严萍;;不同介质下纳秒脉冲介质阻挡放电特性对比[J];高电压技术;2011年06期
7 关炎芳;张国贤;俞正寅;;新型锯齿流道压电微泵加工制作及试验(英文)[J];纳米技术与精密工程;2010年02期
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