碲锌镉阵列探测器的研究

发布时间：2018-06-10 18:22

本文选题：仪器 + 探测器　；参考：《天文学报》2013年05期

【摘要】：碲锌镉(CdZnTe)阵列探测器是近年来迅速发展的新型半导体探测器,具有高空间分辨率、高能量分辨率和可在室温下工作的特点.介绍了碲锌镉晶体的物理特性和工作原理,并重点叙述了碲锌镉阵列探测器的制作工艺,包括晶片的预处理、钝化、欧姆电极制作、阵列模板选择、阵列封装工艺选择(微互联方式).为了测试碲锌镉探测器性能,中国科学院暗物质与空间天文重点实验室和合作单位成功制作了4 pixel×4 pixel和8pixel×8 pixel碲锌镉阵列(厚度分别为5mm和2 mm,像素大小为2 mm×2 mm,间隙分别为0.15 mm和0.2 mm).在~(137)Cs放射源照射下,实验室利用自行研制的、基于ASIC(Application Specific Integrated Circuit)芯片的多通道电子读出系统,对4 pixel×4 pixel碲锌镉阵列进行了实验评估,首次获得了16 pixel的能谱以及对应的能量分辨本领,其最优分辨本领达4.8%@662 keV.
[Abstract]:CdZnTe array detector is a new type of semiconductor detector developed rapidly in recent years. It has high spatial resolution, high energy resolution and can work at room temperature. In this paper, the physical characteristics and working principle of ZnCdTe crystal are introduced, and the fabrication process of ZnCdTe array detector is described in detail, including pretreatment, passivation, ohmic electrode fabrication, selection of array template, etc. Array packaging process selection (micro-interconnection mode). In order to test the performance of zinc cadmium tellurium detector, The 4 pixel 脳 4 pixel and 8pixel 脳 8 pixel Zn / CD tellurium arrays (thickness of 5mm and 2 mm, pixel size of 2 mm 脳 2 mm, gap of 0.15 mm and 0.20 mm) have been successfully fabricated by the key Laboratory of Dark matter and Space Astronomy of the Chinese Academy of Sciences. An experimental evaluation of 4 pixel 脳 4 pixel zinc cadmium tellurium array was carried out by using a multichannel electronic readout system based on ASIC Application specific Integrated Circuit (ASIC Application specific Integrated Circuit) chip. The energy spectrum of 16 pixel and the corresponding energy resolution are obtained for the first time. The optimal resolution is 4.8keV and 662keV.
【作者单位】：中国科学院紫金山天文台;中国科学院暗物质与空间天文重点实验室;中国科学院大学;
【基金】：中国科学院知识创新工程重要方向项目(空间科学预先研究项目) 国家自然科学基金项目(11003051,11273070)资助
【分类号】：P111

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