开关电源电路设计及其高压功率器件研制

发布时间：2018-02-12 20:23

本文关键词： 智能照明开关电源 LDMOS VDMOS IGBT　出处：《厦门大学》2014年硕士论文　论文类型：学位论文

【摘要】：开关电源作为电子设备的动力之源,向着高效率、高功率因数、低成本的方向发展；核心元件高压功率开关器件是影响开关电源的效率与可靠性的主要因素。因此对开关电源电路设计及其高压功率器件的研究具有现实意义。本文首先针对LED的工作特性,创建驱动IC、变压器的PSpice模型和建立电路仿真系统,采用原边控制原理来实现恒流、恒压输出,完成反激式LED驱动开关电源。其次针对高压功率开关器件进行研究：基于RESURF原理设计了一款能够满足耐压大于600V的LDMOS,应用到LED驱动芯片的高低压集成电路的制备中；为了提高开关电源系统工作频率与效率,设计完成了一款开关速度快的VDMOS;对传统的Trench-NPT-IGBT器件设计进行优化改进,设计一款具有高可靠性的1200V IGBT。论文工作的创新点体现在： (1)在LDMOS设计中,加入p-top降场层、P埋层、N-buffer层,提高了漂移区参杂浓度,降低了比导通电阻,对影响器件特性的参数Ld、Lf、Lp、LPBL进行优化,结合现有BCD工艺给出一套LDMOS器件研制的工艺方案。 (2)在VDMOS设计中,采用高能离子注入方法降低横向扩散程度,获得更短有效栅长,减小反向传输电容,提高开关速度；同时利用JFET注入来解决导通电阻增加的矛盾,实现VDMOS的Xjp、DCS、LW、LP参数的优化设计。 (3)在Trench-NPT-IGBT设计中,引入沟槽侧边多晶硅电极,获得逆向电场的方法来改善沟槽栅底部电场累积的缺点,并对沟槽侧边多晶硅电极的宽度、深度、电压参数优化设计,获得具有击穿电压高和通态压降低的器件结构。另外,还针对开关电源及高压功率器件的具体应用,设计一套分布式LED智能照明控制系统方案,并完成相应的硬件电路及电路模块开发。
[Abstract]:As the power source of electronic equipment, switching power supply is developing towards the direction of high efficiency, high power factor and low cost. The high voltage power switch device of the core element is the main factor that affects the efficiency and reliability of the switching power supply, so it is of practical significance to study the circuit design of the switching power supply and the high voltage power device. In this paper, first of all, according to the working characteristics of LED, the PSpice model of driving ICand transformer and the circuit simulation system are established. The principle of original edge control is used to realize the constant current and constant voltage output. The flyback LED drive switching power supply is completed. Secondly, the high voltage power switch device is studied. Based on the principle of RESURF, a LDMOS is designed which can satisfy the withstand voltage more than 600V and is applied to the fabrication of the high and low voltage integrated circuit of the LED driver chip. In order to improve the frequency and efficiency of switching power supply system, a VDMOS with high switching speed is designed, and the traditional Trench-NPT-IGBT device design is optimized and improved to design a 1200V IGBT with high reliability. The innovative points of the thesis work are as follows:. 1) in the design of LDMOS, adding p-top down-field layer / P buried layer and N-buffer layer increases the drift zone impurity concentration, reduces the specific on-resistance, optimizes the parameters that affect the characteristics of the device, and gives a set of process scheme for the development of LDMOS device combined with the existing BCD process. In the design of VDMOS, the high energy ion implantation is used to reduce the transverse diffusion degree, obtain shorter effective gate length, reduce the reverse transfer capacitance, and improve the switching speed. At the same time, JFET implantation is used to solve the contradiction of increasing on resistance. The optimization design of VDMOS parameters is realized. In the design of Trench-NPT-IGBT, the method of reverse electric field is introduced to improve the electric field accumulation at the bottom of the groove gate, and the width, depth and voltage parameters of the polysilicon electrode on the side of the groove are optimized. The device structure with high breakdown voltage and low on-state voltage is obtained. In addition, a distributed LED intelligent lighting control system is designed for the specific applications of switching power supply and high voltage power devices, and the corresponding hardware circuits and circuit modules are developed.
【学位授予单位】：厦门大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN86

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