光纤通信系统中接收端光电器件集成结构及工艺兼容若干问题的研究

发布时间：2018-03-27 21:51

本文选题：光电子集成　切入点：光探测器　出处：《北京邮电大学》2014年博士论文

【摘要】：随着光纤通信系统正逐步向集成化、智能化、低成本、高可靠性的新一代光网络方向发展,对系统中的光电子和电子器件都提出了更高的要求。光电集成器件以其体积小、成本低、损耗低、性能稳定的优势满足了下一代光纤通信系统的发展需求。光接收端是构建光纤通信系统的关键组成部分之一,因此对组成接收端的光电集成器件开展相关研究具有极其重要的意义。硅基电子学器件以其工艺成熟、成本低廉、稳定性高等优势得到了广泛的应用,III-V族有源光学器件则是光纤通信系统中的关键器件,如何发挥这两类器件各自特性的优势,面临着集成结构、互联技术、封装工艺、工艺兼容性等诸多难题。因此研究光纤通信系统中接收端的光电集成结构及工艺兼容性成为了发展高速光电子集成器件的热点课题。本论文围绕光电集成器件的结构及工艺兼容性问题,开展了对光纤通信系统中接收端光电集成器件的研究。论文主要的创新和研究成果如下： 1.设计了InP基长波长光探测器以及与CMOS集成电路集成的接收机前端。对InP基长波长光探测器的工作原理、频率响应特性、量子效率进行了研究。分析了封装参数对集成器件响应特性的影响。研究了接收机前端金属键合集成工艺兼容性的关键问题。制备的光探测器在1550nm入光处具有0.95A/W的响应度,3-dB频率响应带宽为8.5GHz。在-5V偏压时,暗电流小于0.1nA,电容约为0.42pF。集成的接收机前端带宽约为1.7GHz,接收机前端最高可实现3Gbps速率的信号传输。 2.进一步研究了多通道接收组件的封装及其光电集成兼容工艺,设计并制备了多通道阵列光电集成接收组件。理论上分析了蝶形封装的设计对高速接收组件信号接收性能的影响。器件在1550nm入光下,制备的阵列光电集成接收组件的3-dB频率响应带宽分别为5.33GHz和4.36GHz。进一步改善外围驱动电路、封装接口、测试板等特性,可以实现单通道10Gbps速率以上的信号接收。 3.提出并制备了一种基于能带渐变、掺杂渐变的零偏压光探测器(Zero BiasPD)。经研究该结构吸收层厚度为350nm时,器件拥有最大带宽效率积。器件在3.3V反偏压下,1550nm入光处,测得量子效率为21.14%,响应度为0.2638A/W。在反向偏压分别为0V、3.3V时,3-dB频率响应带宽分别为12.27GHz、14.9GHz。测试结果表明光探测器在0V下的频率响应带宽超过最大带宽值的80%,满足低功耗光纤通信系统的实际应用。 4.从优化合金电极的传输系数、特征阻抗出发,研究了Pt/Ti/Pt/Au合金电极的信号传输特性。实现了电极材料在特定厚度下,传输系数S21参数及特征阻抗Zo的最优方案,总体上降低了器件的RC延迟效应。着重解决了光探测器在低频段尤其是在10～200MHz频段下,频率响应特性严重下跌的问题。提出了对器件结构及制备工艺的改进方案,改进了制备器件的刻蚀方法,精确了开孔时间以及简化电极蒸镀工序。同时,新工艺的应用有效的提高了器件的频率响应带宽。 5.探讨了一种基于InP/Si双基复合衬底的光电子集成兼容工艺技术。研究了工业流水线上的晶圆清洗工序及键合技术,对晶圆键合条件做了理论分析。以此为基础,制备了适用于高速光电子集成器件InP/Si双基复合衬底。对制备的InP/Si双基复合衬底做了扫描电镜(SEM)、X射线衍射谱分析。探讨了这种光电集成工艺对衬底晶片表面特性的影响,并对其在工业流水线上生产并制作光电子器件的可行性进行了分析和讨论。
[Abstract]:As the optical fiber communication system is gradually developing towards the new generation of optical networks with integrated , intelligent , low cost and high reliability , the advantages of the optoelectronic integrated device in the development of the next generation optical fiber communication system are met . The optoelectronic integrated device has the advantages of small size , low cost , low loss and stable performance . The optical receiving terminal is a key component in the optical fiber communication system .

The thesis focuses on the structure and process compatibility of photoelectric integrated devices , and carries out the research on the photoelectric integrated devices at the receiving end of the optical fiber communication system . The main innovations and the research results are as follows :

1 . InP - based long - wavelength photodetector and receiver front - end integrated with CMOS integrated circuit are designed . The working principle , frequency response and quantum efficiency of InP - based long wavelength photodetector are studied . The key problem of the compatibility of the package parameters on the response characteristics of integrated devices is analyzed . The optical detector has a response of 0.95A / W at 1550 nm , a 3 - dB frequency response bandwidth of 8.5 GHz , and a capacitance of about 0.42 pF . The integrated receiver front - end bandwidth is about 1.7GHz , and the receiver front end can achieve signal transmission at 3Gbps rate .

2 . The encapsulation of the multi - channel receiving module and its photoelectric integrated compatibility technology are studied . The multi - channel array photoelectric integrated receiving module is designed and fabricated . The influence of the design of the butterfly package on the signal receiving performance of the high - speed receiving component is analyzed theoretically . The 3 - dB frequency response bandwidth of the fabricated array photoelectric integrated receiving component is 5.33GHz and 4.36GHz , respectively . The characteristics of the peripheral driving circuit , the package interface and the test board can be further improved , and the signal receiving at the single channel above 10Gbps can be realized .

3 . A zero bias light detector ( Zero BiasPD ) based on energy band gradient and doping gradient is proposed and prepared . The results show that the frequency response bandwidth of the optical detector is 12.27GHz and 14.9GHz when the reverse bias voltage is 0 V and 3.3 V , respectively . The results show that the frequency response bandwidth of the photodetector at 0V exceeds 80 % of the maximum bandwidth value , and the practical application of the low power optical fiber communication system is met .

4 . The signal transmission characteristics of Pt / Ti / Pt / Au alloy electrode are studied from the transmission coefficient and characteristic impedance of the optimized alloy electrode . The optimal scheme of the electrode material under the specific thickness , the transmission coefficient S21 parameter and the characteristic impedance Zo is studied .

5 . A technology for the integration of InP / Si based on InP / Si dual - base composite substrate is discussed . The wafer cleaning process and bonding technique on the industrial production line are studied . The wafer bonding conditions are analyzed theoretically . The effect of this process on the surface characteristics of the substrate wafer is discussed . The feasibility of the fabrication and fabrication of optoelectronic devices on the industrial production line is discussed and discussed .

【学位授予单位】：北京邮电大学
【学位级别】：博士
【学位授予年份】：2014
【分类号】：TN929.11

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