新型TFT-LCD黑矩阵的细线化研究

发布时间：2018-04-09 15:03

本文选题：黑矩阵　切入点：线宽　出处：《液晶与显示》2014年04期

【摘要】：介绍了新型TFT-LCD黑矩阵细线化研究。在原有工艺设备的基础上,突破设备局限和工艺瓶颈,通过引入相掩膜技术和背面曝光设备,达到进一步减小黑矩阵线宽的效果。实验测试结果显示:在普通掩膜板设计上应用相位移掩膜板技术,降低透光区边缘衍射和散射现象,使曝光后黑矩阵线宽降低1.0~1.5μm。在原有工艺基础上添加背面曝光工艺,使黑矩阵材料在显影后进行背面曝光预固化,改善黑矩阵图形形貌,进一步减小黑矩阵线宽达到0.3~0.5μm。通过新工艺和新设备的引入和应用,黑矩阵线宽整体降低1.5~2.0μm,达到5.0~5.5μm,可以满足目前高PPI(单位面积像素个数)产品对透过率和对比度要求。
[Abstract]:The study of new TFT-LCD black matrix thinner. Based on the original equipment, equipment limitations and breakthrough technology bottlenecks, exposure equipment through the introduction of phase mask technology and back, to further reduce the black matrix effect. The linewidth test results showed that: in the ordinary mask design on the application of phase shift mask technology and reduce the transmission area edge diffraction and scattering phenomenon, the black matrix decreased after exposure to 1.0~1.5 M. linewidth add back exposure process on the basis of the original process, the black matrix material back exposure pre curing after development, improve the black matrix pattern morphology, further reducing the black matrix width reaches 0.3~0.5 M. through new technology and new equipment the introduction and application of black matrix linewidth overall 1.5~2.0 m, to 5.0~5.5 m, can meet the high PPI (pixel number) of the product rate and contrast requirements through.

【作者单位】：成都京东方光电科技有限公司;
【分类号】：TN873.93

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