微波前端高功率微波效应研究

发布时间：2018-04-18 01:03

本文选题：微波前端 + HPM效应　；参考：《电子科技大学》2014年硕士论文

【摘要】：微波前端作为无线通信系统的一部分,是典型的高功率微波“前门”攻击对象。关于PIN限幅器和LNA器件级HPM效应研究较多,但针对部件级微波前端效应机理报道较少;了解和掌握微波前端部件级HPM效应物理机制与规律特性对于改进和提高微波前端电子系统的抗毁性具有重要意义。本论文主要开展包括PIN限幅器、低噪声放大器(LNA)在内的微波前端HPM效应理论与实验研究。首先,论文简要介绍了课题的研究背景和意义以及国内外研究现状;其次,根据课题注入效应实验需求,设计和制作了单级、多级PIN限幅器以及微波前端效应实验样品;再次,考虑在大功率微波脉冲作用下器件自身功耗所导致的自加热效应,通过热-电类比的方法实现电热耦合电路模型建模,实现了统一商业软件模拟环境下电、热两个物理过程的耦合计算,由此建立了多级PIN限幅器以及包含PIN限幅器和LNA在内的微波前端电热耦合部件级效应电路模型,并进行了多种微波脉冲参数下的效应模拟计算;最后,搭建了L波段注入实验系统,开展效应实验研究,以验证模拟计算结果。模拟计算结果表明:微波脉冲功率和脉宽对结温升的影响最大,而频率和前沿参数对结温升影响甚小;随着功率和脉宽的增加,多级PIN限幅器前级厚的I层PIN二极管管比后级薄的I层PIN二极管结温升高,前级厚的I层PIN二极管更容易损伤;多级PIN限幅器的损伤程度依赖于不同的组合脉冲形式,脉冲间隔越短,损伤程度越大;微波前端中前级PIN限幅器结温升规律同单独的PIN限幅器类似,达到相同结温升所需的功率和脉冲关系符合Wunsch-Bell规律;实测多级PIN限幅器输入输出特性和微波前端小信号3dB恢复时间与模拟计算结果基本一致,表明基于电热自洽耦合模型的电路模拟方法的有效性。
[Abstract]:As a part of wireless communication system, microwave front end is a typical high power microwave front door attack object.There are many researches on PIN limiter and LNA device level HPM effect, but there are few reports on the mechanism of component level microwave front-end effect.It is of great significance to understand and master the physical mechanism and regular characteristics of HPM effect in microwave front-end for improving and improving the invulnerability of microwave front-end electronic system.In this thesis, the theoretical and experimental research on the HPM effect of microwave front-end, including PIN limiter and LNA, is carried out.Firstly, this paper briefly introduces the research background and significance of the project and the current research situation at home and abroad. Secondly, according to the experimental requirements of the project injection effect, the single-stage, multi-stage PIN limiter and microwave front-end effect experimental samples are designed and fabricated.Considering the self-heating effect caused by the device's own power consumption under the action of high power microwave pulse, the model of electrothermal coupling circuit is built by thermoelectric analogy, and the electricity under the unified commercial software simulation environment is realized.Based on the coupled calculation of thermal two physical processes, the multistage PIN limiter and the electro-thermal coupling component level circuit model of microwave front end including PIN limiter and LNA are established, and the effects under various microwave pulse parameters are simulated and calculated.Finally, the L band injection experiment system is set up, and the effect experimental research is carried out to verify the simulation results.The simulation results show that microwave pulse power and pulse width have the greatest influence on junction temperature rise, while frequency and front parameters have little effect on junction temperature rise, and with the increase of power and pulse width,The junction temperature of I layer PIN diode with multistage PIN limiter is higher than that of I layer PIN diode with lower stage thickness, and the damage degree of multistage PIN limiter depends on different combination pulse form.The shorter the pulse interval is, the greater the damage is, and the law of temperature rise of the front end PIN limiter is similar to that of the single PIN limiter, and the relationship between the power and pulse required to achieve the same junction temperature is in accordance with the Wunsch-Bell rule.The measured input and output characteristics of multistage PIN limiter and the small signal 3dB recovery time of microwave front end are in good agreement with the simulated results, which shows that the circuit simulation method based on electrothermal self-consistent coupling model is effective.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN92

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