异质兼容集成微系统的实现途径与技术的研究

发布时间：2018-04-23 01:07

本文选题：Si + Ⅲ-Ⅴ　；参考：《北京邮电大学》2014年博士论文

【摘要】：近十几年来,信息产业突飞猛进,现代光通信网面临着空前的挑战。光纤通信网的数据处理与收发模块中包含了大量的光电子器件,所以光电子器件直接影响着光纤通信网络的综合性能。为了提高现代光纤通信网络的性能,人们将光电子器件集成到了同一芯片中,即光电集成。光电集成技术使光通信系统趋于型化甚至微型化,即集成微系统。集成微系统的优点是很明显的：首先,体积小、重量轻,易于携带,可以更广泛地应用于航天、无线通信等领域；其次,集成微系统省去了原来分立的各个器件之间的连接与耦合,大大降低了系统的出错概率,提高了其稳定性；再次,集成微系统具有能耗低的优点。鉴于此,光电集成成为了光电子器件发展的大势所趋。本论文以单片光电集成为出发点,重点研究了实现异质兼容集成微系统的三种途径：GaAs/Si异变外延、InAs/GaAs自组织量子点、Ⅲ-Ⅴ族含硼半导体材料。论文的主要研究内容及创新点如下： 1.针对GaAs/Si异变外延生长,系统地优化了传统两步法中低温GaAs成核层的生长温度、厚度及高温GaAs外延层的生长温度。进而提出了三步法,即在低温成核层(420℃)与高温外延层(685℃)之间插入一层中间温度层(630℃,300nm)。实验表明：三步法可以显著降低GaAs异变外延层的表面均方根(RMS)粗糙度,1.8μm的GaAs异变外延层的粗糙度由3.6nm降至2.6nm(扫描面积10×10μm)。进一步,结合循环退火,将粗糙度降至1.8nm,同时样品表面的腐蚀坑密度由108/cm2降低至106/cm2量级； 2.利用三步法,在Si(100)衬底上生长出了InGaAs/GaAs应变双层结构,并利用自卷曲技术成功制备出了结构质量良好的Si基Ⅲ-Ⅴ族微米管阵列； 3.深入开展了InAs/GaAs自组织量子点的MOCVD生长研究。优化了单层InAs/GaAs量子点的沉积速率,Ⅴ/Ⅲ比,生长温度,低温盖层厚度等关键参数。在此基础上,生长了多层的InAs/GaAs量子点,引入GaAs0.5P0.5应变补偿层,有效抑制了多层量子点的应变积累,使量子点的PL强度随着层数的增加而增加。此外,还利用InGaAs应变减少层使量子点发光波长红移； 4.在GaAs/Si异变外延与量子点生长研究基础上,开展了Si基InAs/GaAs自组织量子点的初步生长探索。实验发现：在相同InAs沉积厚度的情况下,Si基InAs/GaAs量子点的尺寸大于GaAs基量子点,从而使量子点PL波长红移。此外,还将量子点插入Si基GaAs异变外延层阻挡穿透位错向上穿透,然而,新的位错会在量子点表面大岛处成核,使得样品表面腐蚀坑密度由106/cm2增加至107/cm2,所以仍需要进一步优化Si基量子点生长条件； 5.相对于三元材料,含硼四元材料的晶格与能带能够更加灵活地调整,是实现单片集成的另一种可能途径。作为含硼四元材料研究的铺垫,BGaAs三元合金生长首先被研究：分别采用TMGa与TEGa两种Ga源来生长BGaAs三元合金,研究发现：使用TEGa可以在更低的生长温度下(500℃)获得质量良好的BGaAs合金,且可以使B组分由原来的3%提高到5%； 6. BInGaAs/GaAs高应变多量子阱结构及光学性质研究：生长了In组分为0.35与0.4的InGaAs/GaAs高应变多量子阱,以及相应的BInGaAs/GaAs多量子阱,研究发现：在应变相同的条件下,BInGaAs/GaAs多量子阱发光波长更长,而对于发光波长相同的样品,BInGaAs/GaAs多量子阱的应变较低,可以生长得到结晶质量更好的样品； 7.深入开展了BGaAsSb四元合金及BGaAsSb/GaAs多量子阱的生长实验。研究发现：B并入可以使得上述两种BGaAsSb材料中Sb的并入提高。经分析后认为：因Sb具有表面集聚效应,在生长锑化物(如GaAsSb)时,会有一部分Sb以液态金属的形式留在锑化物薄膜表面,阻碍了Sb元素并入至合金中。而B并入可以使得这种表面集聚现象减弱,从而使得Sb并入效率提高。
[Abstract]:In the past decade, the information industry has developed rapidly, and the modern optical communication network is facing unprecedented challenges. The data processing and transceiver module of the optical fiber communication network contains a large number of optoelectronic devices, so optoelectronic devices have a direct impact on the comprehensive performance of the optical fiber communication network. The sub devices are integrated into the same chip, that is photoelectric integration. Optoelectronic integration technology makes optical communication systems tend to be typed or even miniaturized, that is, integrated microsystems. The advantages of integrated microsystems are obvious: first, small volume, light weight, easy to carry, and more widely used in space, wireless communication and other fields; secondly, integrated microsystems. It saves the connection and coupling between the original discrete devices, greatly reduces the error probability of the system and improves its stability. Again, integrated microsystems have the advantages of low energy consumption. In view of this, optoelectronic integration has become the trend of the development of optoelectronic devices.
In this paper, we focus on three ways to realize heterogeneous integrated microsystems: GaAs/Si heteroepitaxy, InAs/GaAs self organized quantum dots, and boron doped semiconductor materials. The main contents and innovations of this paper are as follows:
1. in view of the GaAs/Si heteroepitaxy growth, the growth temperature, thickness and the growth temperature of the GaAs epitaxial layer of the low temperature GaAs in the traditional two step method are systematically optimized. Then the three step method is put forward, that is, the intermediate temperature layer (630 degrees C) is inserted between the low temperature nucleation layer (420 C) and the high temperature epitaxial layer (685 C). The experiment shows that: three steps The surface mean square root (RMS) roughness of the GaAs heteroepitaxial layer can be reduced significantly. The roughness of the GaAs heteroepitaxial layer of 1.8 m is reduced from 3.6nm to 2.6nm (scanning area 10 x 10 mu m). Further, the roughness is reduced to 1.8nm by cyclic annealing, and the corrosion pit density of the sample surface is reduced from 108/cm2 to 106/cm2 magnitude.
2. the InGaAs/GaAs strain double layer structure was grown on the Si (100) substrate by the three step method, and the Si based III - V microtube array with good structure quality was successfully prepared by self winding technology.
3. the MOCVD growth of InAs/GaAs self organized quantum dots was carried out in depth. The key parameters such as the deposition rate of single InAs/GaAs quantum dots, V / III ratio, growth temperature, and low temperature cap thickness were optimized. On this basis, the multilayer InAs/GaAs quantum dots were grown and the GaAs0.5P0.5 strain compensation layer was introduced to effectively restrain the strain of multi layer quantum dots. The PL intensity of quantum dots increases with the increase of the number of layers. In addition, the InGaAs strain reduction layer is used to make the emission wavelength of the quantum dots red shift.
4. on the basis of GaAs/Si heteroepitaxy and quantum dot growth, the initial growth of Si based InAs/GaAs self organized quantum dots is explored. The experiment shows that the size of Si based InAs/GaAs quantum dots is larger than the GaAs based quantum dots in the same InAs deposition thickness, thus the PL wavelength of the QDs is red shift. Furthermore, the quantum dots are inserted into the Si base GaAs. The heteroepitaxial layer obstruct the penetration dislocation upward, however, the new dislocation will nucleate at the large Isle of the quantum dot surface, which makes the surface corrosion pit density increase from 106/cm2 to 107/cm2, so it is still necessary to further optimize the growth conditions of the Si based quantum dots.
5. relative to three yuan material, the lattice and energy band of four yuan containing boron can be adjusted more flexibly. It is another possible way to realize monolithic integration. As the paving of boron containing four yuan material, the growth of BGaAs three alloy is first studied: the BGaAs three yuan alloy was grown by TMGa and TEGa two kinds of Ga sources respectively. The study found: using TE Ga can obtain good quality BGaAs alloy at lower growth temperature (500 C) and increase the B fraction from 3% to 5%.
Study on the structure and optical properties of 6. BInGaAs/GaAs high strain multiple quantum wells: the growth of In multiquantum wells with 0.35 and 0.4 InGaAs/GaAs high strain quantum wells and corresponding BInGaAs/GaAs multiple quantum wells. It is found that, under the same strain conditions, BInGaAs/GaAs multiple quantum wells have longer light waves, and BInG for samples with the same luminous wavelength. The strain of aAs/GaAs multiple quantum wells is low, and the samples with better crystalline quality can be grown.
7. the growth experiments of BGaAsSb four element alloy and BGaAsSb/GaAs multiple quantum well have been carried out in depth. It is found that B incorporation can increase the incorporation of Sb in the two BGaAsSb materials. After analysis, there will be some Sb in the form of antimony in the form of liquid metals in the form of antimony (such as GaAsSb) because of the aggregation effect of Sb. The surface of the film hinders the incorporation of Sb elements into the alloy, and the incorporation of B can reduce the surface agglomeration phenomenon, thus improving the incorporation efficiency of Sb.

【学位授予单位】：北京邮电大学
【学位级别】：博士
【学位授予年份】：2014
【分类号】：TN304;TN929.11

【参考文献】