PDP驱动电路输出端ESD防护设计

发布时间：2018-06-01 01:48

本文选题：等离子显示器 + 静电放电保护　；参考：《电子科技大学》2014年硕士论文

【摘要】：本文主要研究等离子显示器(Plasma Display Panel,PDP)驱动电路输出端的静电保护(Electro-Static discharge,ESD)问题,属于高压静电防护设计领域,在芯片生产、测试等过程中会遭受静电放电损伤,而且高压器件的静电防护能力较弱,因此,静电防护设计存在重大意义。本论文的静电放电保护设计主要有三方面内容。(1)首先针对四种基本静电防护器件进行器件设计和工艺仿真,然后交于foundry流片,并进行了传输线脉冲(Transmission line pulse,TLP)测试。测试结果显示TLP测试和工艺仿真之间有良好的对应关系,其中LIGBT器件的全芯片静电防护能力最强,HBM可以达到6KV以上,同时设计者还发现器件的静电放电保护能力和防闩锁能力存在矛盾。(2)设计者又重点优化了LIGBT器件的结构参数来最大程度的提高其静电放电能力,该优化的主要思路为减短静电放电电流路径,从而降低其静电放电时的导通电阻,尽量降低产生的热量,从而保护器件不受损毁,该针对器件结构优化一定程度改善了器件的抗静电放电能力,但未根本解决器件泄放电流能力和闩锁矛盾。(3)另一种设计思路是选择性触发寄生Silicon Controlled Rectifier(SCR)结构和PNP结构。其具体设计方案为用一个开关管来选择性控制静电放电能力强的SCR开启还是抗闩锁能力强的PNP开启,开关管用低压N-Mental-Oxide-Semiconductor(NMOS)来实现,针对该方案设计提出几种具体的实施方案,通过仿真来看基本能很好的满足设计要求,从根本上解决了器件的静电放电能力和抗闩锁能力的不可调和矛盾,但需进一步进行流片和TLP测试验证。综上所述,LIGBT器件经过优化可以很好的满足设计要求,同时新提出的选择性触发SCR和PNP结构也经仿真验证其能很好的解决静电防护能力和抗闩锁能力的矛盾。
[Abstract]:In this paper, the problem of electrostatic protection Electro-Static charge ESD (ESD) in the output of plasma Display panel (PDP) drive circuit of plasma display is studied. It belongs to the field of high voltage electrostatic protection design, and it will be damaged by electrostatic discharge in the process of chip production and testing. And the electrostatic protection ability of high voltage device is weak, therefore, electrostatic protection design has great significance. In this paper, there are three main aspects in the design of electrostatic discharge protection. Firstly, the device design and process simulation of four basic electrostatic protection devices are carried out. Then, the device design and process simulation are carried out on the foundry wafer, and the transmission line pulse transmission line pulsetrain (TLP) test is carried out. The test results show that there is a good correspondence between the TLP test and the process simulation, and the LIGBT device has the strongest full chip electrostatic protection capability, and the 6KV can reach above. At the same time, the designer also found that there is a contradiction between the protection ability of electrostatic discharge and the anti-latch ability of the device. (2) the designer also optimizes the structural parameters of the LIGBT device to maximize its electrostatic discharge capability. The main idea of this optimization is to reduce the current path of electrostatic discharge, so as to reduce the on-resistance of electrostatic discharge, reduce the heat produced, and protect the device from damage. The optimization of the device structure improves the antistatic discharge ability of the device to a certain extent, but it does not fundamentally solve the problem of leakage current and latch contradiction. Another design idea is selective trigger parasitic Silicon Controlled Rectifier (SCR) structure and PNP structure. The specific design scheme is to use a switch tube to selectively control the SCR opening with strong electrostatic discharge capability or PNP with strong latch resistance, and to realize the switch tube with low-voltage N-Mental-Oxide-Semisher NMOSs. Several concrete implementation schemes are put forward for the design of this scheme. The simulation results show that it can meet the design requirements very well and solve the irreconcilable contradiction between the electrostatic discharge ability and the anti-latch ability of the device fundamentally, but it needs to be further verified by the flow sheet and TLP test. In conclusion, the optimized LIGBT devices can meet the design requirements well, and the new selective trigger SCR and PNP structures can solve the contradiction between the electrostatic protection ability and the anti-latch ability through simulation.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN873.94

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