PDP铝掺杂氧化镁介质层的研究

发布时间：2018-06-13 19:05

本文选题：等离子显示器(PDP) + 介质保护层　；参考：《电子科技大学》2014年硕士论文

【摘要】：等离子显示器(PDP)具有色彩逼真、屏幕大、视角宽、亮度高、响应速度快及清晰度高等特点,在众多显示器件中脱颖而出,成为高清晰度大屏幕电视及显示终端的最佳候选者之一,但由于其功耗大、成本高,制约了PDP的进一步发展。改善PDP介质层的性能,是提高PDP放电效率和降低功耗的重要途径,其方法主要有在MgO介质层中掺杂其他材料、寻找新材料代替MgO等。结合国内外相关研究成果,本文提出了在MgO中掺杂Al的方法,来实现改善PDP介质层性能的目的。本文的主要内容及结论:1、用水热法制备了铝掺杂氧化镁粉末,用SEM和XRD对铝掺杂氧化镁粉末的形貌和晶相进行了表征,对铝掺杂氧化镁粉末的制备方法进行了优化,制备出了形状规则、粒径大于5μm的立方体状铝掺杂氧化镁粉末。2、探索了直接沉淀法和金属醇盐水解法制备铝掺杂氧化镁粉末,用SEM和XRD对铝掺杂氧化镁粉末的形貌和晶相进行了表征。直接沉淀法制备铝掺杂氧化镁的缺点是,铝掺杂量大于1%时无法使铝完全掺入到MgO晶格中,且直接沉淀法无法制备出立方体状颗粒。金属醇盐水解法制备铝掺杂氧化镁的缺点是,金属醇盐溶液难以制备,铝掺杂量难以控制,制备时间周期长,且不适合大规模生产。3、测试了铝掺杂氧化镁介质层PDP的放电电压性能。水热法制备的铝掺杂氧化镁粉末,当铝掺杂量不超过3%时,PDP的着火电压与维持电压可分别降低16.3%和15.7%。沉淀法制备的铝掺杂氧化镁粉末,只有当铝掺杂量不超过1%时,PDP的放电电压有所降低,着火电压和维持电压可分别降低9.4%和8.6%。4、研究了铝掺杂氧化镁介质层PDP的放电延迟时间。不同铝掺杂量的铝掺杂氧化镁介质层PDP的放电延迟时间,均少于具有纯氧化镁介质层的PDP,延迟时间的减少值在几十纳秒到150纳秒之间,且随着铝掺杂量的增加,放电延迟时间缩短,随着放电气体中Xe比例的增加,放电延迟时间也缩短。5、设计和制作了两种PDP放电测试用驱动电源。一种是利用一个MOSFET作为开关管,开关频率为50kHz、脉冲占空比为50%、脉冲幅度0~800V可调的单向脉冲电源;另一种是采用全桥驱动方式,开关频率为50kHz、脉冲占空比为50%、脉冲幅度0~1000V可调的双向脉冲电源,这些电源的性能稳定可靠,保证了PDP放电实验工作的顺利进行。
[Abstract]:Plasma display (PDP) has the characteristics of realistic color, large screen, wide viewing angle, high brightness, fast response speed and high definition. It is one of the best candidates for high definition and large screen TV and display terminal, but it restricts the further development of PDP because of its high power consumption and high cost. Improving the performance of PDP dielectric layer is an important way to improve the discharge efficiency and reduce the power consumption of PDP. The main methods include doping other materials in MgO dielectric layer and finding new materials instead of MgO. Based on the research results at home and abroad, the method of doping Al in MgO is proposed to improve the properties of PDP dielectric layer. The main contents and conclusions of this paper are as follows: (1) Aluminum-doped magnesium oxide powder was prepared by hydrothermal method. The morphology and crystal phase of Al-doped magnesium oxide powder were characterized by SEM and XRD, and the preparation method of Al-doped magnesium oxide powder was optimized. Cubic aluminum-doped magnesium oxide powder, whose shape is regular and whose diameter is larger than 5 渭 m, is prepared. Direct precipitation method and hydrolysis of metal alcohol salt water are explored to prepare Al-doped magnesium oxide powder. The morphology and crystal phase of Al doped magnesium oxide powder were characterized by SEM and XRD. The disadvantage of preparing Al-doped magnesium oxide by direct precipitation method is that aluminum can not be completely doped into MgO lattice when the amount of Al doping is greater than 1, and cubic particles can not be prepared by direct precipitation method. The disadvantages of preparing aluminum doped magnesium oxide by hydrolysis of metal alcohol brine are that it is difficult to prepare the solution of metal alcohol salt, the amount of aluminum doping is difficult to control, and the preparation time is long. The discharge voltage performance of aluminum doped magnesium oxide dielectric layer PDP was tested. When the amount of Al doped magnesium oxide powder prepared by hydrothermal method is not more than 3, the ignition voltage and maintenance voltage of PDP can be reduced by 16.3% and 15.7%, respectively. The discharge voltage of PDP was decreased, the ignition voltage and the maintenance voltage were decreased by 9.4% and 8.6%, respectively. The discharge delay time of Al-doped MgO dielectric layer PDP was studied. The delay time of aluminum doped MgO dielectric layer PDP is less than that of pure MgO dielectric layer, and the decrease of delay time is from tens of nanoseconds to 150 nanoseconds, and with the increase of aluminum doping amount, the delay time of PDP is less than that of pure magnesium oxide dielectric layer. The discharge delay time is shortened, and the discharge delay time is shortened by .5with the increase of the ratio of Xe in the discharge gas. Two kinds of driving power supply for PDP discharge test are designed and fabricated. One is to use a MOSFET as a switching tube, the switching frequency is 50 kHz, the pulse duty cycle is 50, the pulse amplitude is 0 ~ 800V adjustable unidirectional pulse power supply; the other is a full-bridge drive mode. The switching frequency is 50 kHz, the pulse duty cycle is 50 and the pulse amplitude is 0 ~ 1000V. The performance of these power sources is stable and reliable, which ensures the smooth operation of PDP discharge experiment.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN873.94

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