新型AC PDP介质保护层制备与性能研究

发布时间：2018-07-13 09:25

【摘要】：等离子体显示器(Plasma display panel,PDP)具有亮度高、色彩还原度好、灰度丰富、对动态画面响应速度高、抗电场和磁场能力强、厚度薄等优点。直到本世纪初,PDP一直被认为是最有希望取代传统CRT(Cathode ray tube)显示器的平板显示技术之一。但是,目前PDP在商用平板显示器市场的份额呈下降趋势。究其原因,过高的驱动电压导致其功耗和成本偏高。研究发现,改善放电单元介质保护层的放电特性是降低交流等离子体显示器(Alternating current plasma display panel,AC PDP)驱动电压的有效方法。本论文以交流等离子体显示器的介质保护层为研究对象,在不增加成本和工艺复杂度的前提下,以降低器件功耗为目标,系统研究四种新型介质保护层的制备方法及放电性能。其中,Zn、Sn共掺杂MgO/MgO、LaB6/MgO和MgO-LaB6/MgO的双层膜结构和工艺为本论文的主要创新点。论文的主要研究内容包括:1.采用第一性原理方法分别计算了Al掺杂MgO和Zn、Sn共掺杂MgO材料的能带结构,利用Hagstrum理论计算了基于俄歇中和与俄歇去激过程的二次电子发射系数。计算结果表明,这两种掺杂方案均能有效降低MgO的禁带宽度,提高材料的二次电子发射系数。因此,采用这两种掺杂材料作为AC PDP介质保护层从理论上可以有效降低器件的放电电压。2.自行设计并搭建了AC PDP面向放电测试系统。该系统包括驱动电源、真空系统、充放气模块、放电单元矩阵四个部分,可模拟AC PDP的工作环境,用于对论文所制备的新型介质保护层进行放电性能测试,验证新型AC PDP介质保护层的可行性。3.采用水热法制备了Al掺杂MgO粉末,并旋涂在AC PDP商用前基板(有MgO介质保护层)上构成Al掺杂MgO/MgO双层介质保护层结构。考察了反应时间、反应温度、溶液填充度、尿素用量、Al掺杂量五个因素对Al掺杂MgO粉末形貌、晶向结构的影响。结果表明,以AC PDP的实际使用条件(10%Xe-Ne,400torr)为例,该介质保护层相对于传统MgO介质保护层的最小着火电压降低了11.2%、最大着火电压降低了14.8%、最大维持电压降低了18.2%、最小维持电压降低了4.2%、放电延迟时间降低了15.8%。4.提出共沉淀法制备Zn、Sn共掺杂MgO粉末,并采用旋涂法在AC PDP商用前基板上制备了Zn、Sn共掺杂MgO/MgO双层介质保护层结构。结果表明,按优化工艺参数制备出的Zn、Sn共掺杂MgO晶粒尺寸为纳米量级,晶向以MgO(110),(111)为主。在上述工艺条件下制备的Zn、Sn共掺杂MgO/MgO双层介质保护层的放电电压和放电延迟时间都获得了降低。在10%Xe-Ne,400 torr条件下,该介质保护层相对于传统MgO介质保护层的最小着火电压降低了3.6%、最大着火电压降低了13.2%、最大维持电压降低了11.7%、最小维持电压降低了12.5%、放电延迟时间降低了33.1%。5.提出丝网印刷方法在AC PDP商用前基板上制备了多晶LaB6不连续膜,形成LaB6/MgO双层介质保护层结构,利用LaB6的低逸出功特性,补充AC PDP放电所需的初始电子。考察了丝网目数、球磨、LaB6含量、烧结温度四个因素对薄膜形貌、晶体结构、透过率和放电性能的影响。放电测试结果表明,在10%Xe-Ne,400 torr条件下,该介质保护层相对于传统MgO单层介质保护层的最小着火电压降低了4.6%、放电延迟时间降低了15.1%。6.提出射频磁控溅射在AC PDP商用前基板上制备了LaB6掺杂MgO薄膜,形成MgO-LaB6/MgO双层保护层结构。考察了溅射功率、靶材中LaB6/LaB6+MgO的质量比对薄膜形貌、晶体结构、透过率以及放电性能的影响。放电测试结果表明,在10%Xe-Ne,400 torr条件下,该介质保护层相对于传统MgO介质保护层的最小着火电压降低了29.6%、最大着火电压降低了27.3%、最大维持电压降低了31%、最小维持电压降低了33%、放电延迟时间降低了14.1%。比较上述四种方案,MgO-LaB6/MgO双层介质保护层结构在降低AC PDP放电电压、提高放电效率方面的优势最为明显。
[Abstract]:Plasma display panel (PDP) has the advantages of high brightness, good color reduction, rich grayscale, high response to dynamic picture, strong ability to resist electric field and magnetic field, and thin thickness. Until the beginning of this century, PDP has always been considered as one of the most promising flat display techniques to replace the traditional CRT (Cathode ray tube) display. At present, the share of PDP in the commercial flat display market is declining. The reason is that the high driving voltage leads to high power and cost. It is found that improving the discharge characteristics of the dielectric protection layer of the discharge unit is to reduce the driving voltage of the Alternating current plasma display panel, AC PDP. In this paper, the dielectric protection layer of AC plasma display is taken as the research object. In order to reduce the power consumption of devices without increasing cost and process complexity, the preparation methods and discharge performance of four new media protection layers are systematically studied. Among them, Zn, Sn Co doped MgO/MgO, LaB6/MgO and MgO-LaB6/MgO double layer films The main innovation of this paper is the structure and process. The main contents of this paper are as follows: 1. the band structure of Al doped MgO and Zn, Sn Co doped MgO material was calculated by the first principle method, and the electron emission coefficient based on auger neutralization and auger deactivation was calculated by Hagstrum theory. The results showed that the two The doping scheme can effectively reduce the band gap of MgO and improve the two electron emission coefficient of the material. Therefore, using these two kinds of doped materials as the protective layer of the AC PDP medium can effectively reduce the discharge voltage of the device and build the AC PDP discharge testing system. The system includes the driving power supply and the vacuum system. System, charging and releasing module, discharge unit matrix four parts, can simulate the working environment of AC PDP, test the discharge performance of the new medium protection layer prepared by the paper, verify the feasibility of the new AC PDP medium protection layer,.3. using the hydrothermal method to prepare the Al doped MgO powder and spin it on the AC PDP commercial front substrate (with MgO medium protection). The layer structure is composed of Al doped MgO/MgO double layer medium protection layer. The effects of five factors, reaction time, reaction temperature, solution filling degree, urea dosage and Al doping amount on the morphology of Al doped MgO powder and crystal structure are investigated. The results show that the medium protection layer is compared with the traditional MgO medium with the actual use conditions of AC PDP (10% Xe-Ne, 400torr). The minimum ignition voltage of the protective layer is reduced by 11.2%, the maximum ignition voltage is reduced by 14.8%, the maximum maintenance voltage is reduced by 18.2%, the minimum maintenance voltage is reduced by 4.2%, the discharge delay time is reduced by 15.8%.4. and the Co doped MgO powder is prepared by the co precipitation method, and the Zn is prepared on the AC PDP substrate by the spin coating method, and Sn Co doped Mg is used. O/MgO double layer medium protective layer structure. The results show that the Zn, Sn Co doped MgO grain size is nanoscale, crystal direction is MgO (110), (111). The discharge voltage and discharge delay time of Sn Co doped MgO/MgO double layer medium protection layer are reduced in Zn, Sn Co doped MgO/MgO double layer medium protection layer. In 10%Xe-Ne, 400 Under Torr conditions, the minimum ignition voltage of the dielectric protection layer is 3.6% lower than that of the traditional MgO medium protection layer, the maximum ignition voltage is reduced by 13.2%, the maximum maintenance voltage is reduced by 11.7%, the minimum maintenance voltage is reduced by 12.5%, the discharge delay time is reduced by 33.1%.5., and the wire mesh printing method is prepared on the AC PDP pre commercial substrate. Crystal LaB6 discontinuous film, forming a protective layer structure of LaB6/MgO double layer medium, using the low work energy characteristics of LaB6, supplemented the initial electrons required by AC PDP discharge. The effects of four factors on the morphology, crystal structure, transmission and discharge performance of the film mesh, ball milling, LaB6 content and sintering temperature were investigated. The discharge test results showed that in 10%Xe-Ne, 4 Under the condition of 00 Torr, the minimum ignition voltage of the dielectric protection layer is 4.6% lower than that of the traditional MgO single layer medium protection layer. The delay time of the discharge is reduced by 15.1%.6.. The LaB6 doped MgO film is prepared on the AC PDP substrate by the RF magnetron sputtering, and the structure of the MgO-LaB6/MgO double layer protection layer is formed. The sputtering power and the LaB6 in the target are investigated. The effect of the mass ratio of /LaB6+MgO on the film morphology, crystal structure, transmittance and discharge performance. The discharge test results show that under the condition of 10%Xe-Ne and 400 Torr, the minimum ignition voltage of the dielectric protection layer is 29.6% lower than the traditional MgO medium protection layer, the maximum ignition voltage is reduced by 27.3%, the maximum maintenance voltage is reduced by 31%, and the minimum voltage is reduced. The maintenance voltage is reduced by 33%, the discharge delay time is reduced by 14.1%. and the above four schemes are compared. The MgO-LaB6/MgO double layer dielectric protection layer has the most obvious advantage in reducing the AC PDP discharge voltage and improving the discharge efficiency.
【学位授予单位】：电子科技大学
【学位级别】：博士
【学位授予年份】：2014
【分类号】：TN873.94

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