高功率音频放大对管的研究与仿真优化设计
发布时间：2018-07-25 08:12
【摘要】：论文的研究目的是通过对某高功率音频放大对管的研究与仿真优化设计,提出一种使器件的二次击穿电流得到提升的新颖结构。通过改善发射极电流集边效应引发的二次击穿问题,从而能够提高本产品安全工作区的范围。基于本实验室与国内某知名半导体公司合作研发项目,并通过产品工艺及版图结构的改进,达到产品参数指标的要求。文中对一款具有新颖结构的高功率音频放大对管进行仿真优化设计,首先对高功率音频放大对管的各个物理参数的设计,设计了各个区的掺杂浓度,扩散系数,迁移率,扩散长度和寿命等,并且确定了器件的纵向参数等。然后对器件纵向结构设计,并且通过仿真软件对工艺流程和元胞结构设计完成了仿真模拟,通过器件和工艺的联合仿真,然后对元胞结构和工艺参数进行仿真优化设计,最终确定了设计器件制作的主要工艺参数和版图设计,并讨论关键工艺步骤的实现方式。对上述设计的高功率音频放大对管进行流片测试,最终测试参数如下:PNP管:BVCBO=-307.1V,ICBO=-13.24nA,BVCEO=-287.4V,ICEO=-25.3nA,BVEBO=-9.13V,IEBO=-18.84nA,VCE(sat)=-0.14V,VBE(sat)=-0.93V,ICM=12.5A,HFE=86,ISB=3A;NPN管:BVCBO=348.2V,ICBO=29.09nA,BVCEO=285.6V,ICEO=520.5nA,BVEBO=8.26V,IEBO=29.87nA,VCE(sat)=0.12V,VBE(sat)=0.92V,ICM=12A,HFE=115,ISB=3.5A。通过流片后的各项测试结果显示,所设计的高功率音频放大对管器件静态参数满足设计要求,并具有较高的二次击穿电流值。
[Abstract]:The purpose of this paper is to propose a novel structure to enhance the secondary breakdown current of the device by studying and optimizing the design of a high power audio amplifier pair. By improving the secondary breakdown caused by the edge effect of emitter current, the range of the safe working area of this product can be increased. Based on the R & D project of our laboratory and a famous semiconductor company in China, and through the improvement of product process and layout structure, we can meet the requirements of product parameters. In this paper, a novel high power audio amplifier is simulated and optimized. Firstly, the doping concentration, diffusion coefficient, mobility of each region are designed for each physical parameter of high power audio amplifier. The diffusion length and lifetime are also determined, and the longitudinal parameters of the device are determined. Then, the longitudinal structure of the device is designed, and the process flow and cell structure are simulated by simulation software, and then the cell structure and process parameters are simulated and optimized by the joint simulation of the device and the process. Finally, the main process parameters and layout design are determined, and the key process steps are discussed. 瀵逛笂杩拌璁＄殑楂樺姛鐜囬煶棰戞斁澶у绠¤繘琛屾祦鐗囨祴璇，
本文编号：2143186
[Abstract]:The purpose of this paper is to propose a novel structure to enhance the secondary breakdown current of the device by studying and optimizing the design of a high power audio amplifier pair. By improving the secondary breakdown caused by the edge effect of emitter current, the range of the safe working area of this product can be increased. Based on the R & D project of our laboratory and a famous semiconductor company in China, and through the improvement of product process and layout structure, we can meet the requirements of product parameters. In this paper, a novel high power audio amplifier is simulated and optimized. Firstly, the doping concentration, diffusion coefficient, mobility of each region are designed for each physical parameter of high power audio amplifier. The diffusion length and lifetime are also determined, and the longitudinal parameters of the device are determined. Then, the longitudinal structure of the device is designed, and the process flow and cell structure are simulated by simulation software, and then the cell structure and process parameters are simulated and optimized by the joint simulation of the device and the process. Finally, the main process parameters and layout design are determined, and the key process steps are discussed. 瀵逛笂杩拌璁＄殑楂樺姛鐜囬煶棰戞斁澶у绠¤繘琛屾祦鐗囨祴璇，
本文编号：2143186
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